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Sunday 14th September
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15:00
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Registration
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17:30
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Opening
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17:50
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Armin Feist, Reiner Bormann, Jakob
Schauss, Jan-Gregor Gatzmann, Nara Rubiano da Silva, Stefanie Strauch, Sascha Schäfer, Claus Ropers (I01)
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Ultrafast transmission electron
microscopy with nanoscopic electron sources
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18:30
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Welcome
Reception
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Monday
15th September
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Session
1: Energy conversion and storage
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Chairperson:
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08:30
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Hannu
Laine, Ville Vähänissi, Jasmin Hofstetter, Ashley E. Morishige, Antti
Haarahiltunen, David P. Fenning and Hele
Savin (I02)
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The size distribution of iron
precipitates in phosphorous-implanted emitters
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09:20
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C.A. Volkert, T.
Wuttke, B. Roos, C. Nowak, and V. Roddatis (O01)
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In-Situ TEM Observation of Planar
Defects Prior to Amorphisation of Si by Electrochemical Lithiation
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09:45
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Volker Naumann, Dominik Lausch, Angelika Hähnel, Otwin Breitenstein and
Christian Hagendorf (O02)
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2D-Extended Defects in Silicon cause
shunting of Si-Solar Cells
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10:10
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Coffee
Break
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Session 2: Strain
and Strain Relaxation
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Chairperson:
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10:40
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Thomas Kehagias (I03)
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Resolving Structure and Strain Issues in
Simple and Complex III-Nitride Nanowires
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11:30
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R. Hull, Dustin
Andersen and Hamed Parvaneh (O03)
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Inverse
Simulation of Misfit Dislocation Network Formation
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11:55
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P. Pirouz, A.
Sehirlioglu (O04)
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Surface Cracking as a Relaxation Mode in
Strained Heteroepitaxial Films
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12:20
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M. Reiche, M.
Kittler, E. Pippel, W. Erfurth, A. Haehnel, and H. Uebensee (O05)
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Strain and Carrier Transport along
Dislocations
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12:50
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Lunch
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Session 3: Atomic
Structure of extended defects
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Chairperson:
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14:30
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Talid Sinno (I04)
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Inherent landscape analysis of defect
microstructure in crystalline materials
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15:20
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H. Yang, Juan G
Lozano, Timothy J Pennycook, Peter B Hirsch and Peter D Nellist (O06)
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STEM Optical Sectioning for Imaging
Screw Displacements in Dislocation Core Structures
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15:45
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C.D. Latham, P. J. L.
Young, T. P. Trevetha, M. I. Heggi, M. J. Rayso, P. R. Briddon (O07)
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An ab initio Investigation into Dislocation
Structures in Graphite
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16:10
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J. Vanhellemont, S. Anada,
T. Nagase, H. Yasuda, A. Schulze, H. Bender, R. Rooyackers and A. Vandooren (O08)
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On the
Impact of Dopants and Si Structure Dimensions on {113}-defect Formation
during In-situ 2 MeV Electron-irradiation in an UHVEM
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16:35
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Break
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17:00
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Poster
session I
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Chairperson:
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Tuesday
16th September
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Session 4:
Doping, Implantation, Irradiation
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Chairperson:
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08:30
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Esidor Ntsoenzok, Carole
Braley, Sylvia Pokam, Frédéric Mazen (I05)
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10-100?m ultra-thin substrates produced by MeV
hydrogen implantation in Si: fundamentals and applications
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09:20
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Jean-Francois Barbot, M.
Vallet, E. Oliviero and M.F. Beaufort (O09)
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In situ evolution of helium bubbles in
4H-SiC under irradiation
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09:45
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A. B
Smirnov, V.P. Kladko, A.A. Korchovyi, R.K.
Savkina, F.F. Sizov, R.S. Udovitska (O10)
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Nanoscale Pattern Formation On The
Surface Of HgCdTe Produced By Ion Bombardment
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10:10
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Coffee
Break
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Session 5: Dislocations
I
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Chairperson:
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10:40
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Maxim Trushin, O.
Vyvenko (I06)
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Enhancement of the Carrier
Thermoemission From the Electronic States at Dislocation Core Due to
Attractive Deformation Potential
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11:30
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O.V.
Feklisova, V.I. Orlov and E.B.
Yakimov (O11)
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EBIC and LBIC investigations of
dislocation trails in Si
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11:55
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Vitaly Kveder, Maria
Khorosheva and Michael Seibt (O12)
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On the Nature of Point Defects Generated
by Motion of Dislocations in Si
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12:20
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D. Jameel, J. F.
Felix, M. Aziz, N. Al Saqri, D Taylor, and M. Henini (O13)
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Investigation of Defects in Polyaniline
(PANI) Grown on High Index GaAs Planes Using Current-Voltage, Conductance and
Deep Level Transient Spectroscopy (DLTS)
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12:50
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Lunch
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Session 6: Mechanical
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Chairperson:
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14:30
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Julien Godet, Firas
Abed El Nabi, J. Guénolé, Sandrine Brochard, and L. Pizzagalli (I07)
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Atomistic approach of the brittle
ductile transition in silicon at low dimensions through the understanding of
dislocation and crack nucleation mechanism
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15:20
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I. Yonenaga, Y. Imoto,
, Y. Ohno, K. Kutsukake and M. Deura (O14)
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Dislocation Mobilities in Ductile to
Brittle Temperature Region in Si
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15:45
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S. Würzner, Rajko Buchwald, Hans Joachim Möller (O15)
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Surface damage and mechanical stability
of silicon wafers
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16:10
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J. Rabier, F.
Pailloux and L. Pizzagalli (O16)
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On the Dislocation Core Structures Associated
to Point Defect Clusters and Micro Crack Formation in Diamond and Silicon
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16:35
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Break
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17:00
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Poster
session II
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Chairperson:
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Wednesday
17th September
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Session 7:
Advanced Characterization
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08:30
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C. Trager-Cowan, G.
Naresh-Kumar, N. Allehiani, S. Kraeusel, B. Hourahine, S. Vespucci, D.
Thomson, J. Bruckbauer, G. Kusch, P. R. Edwards, R. W. Martin, A. P. Day, A.
Winkelmann, A.Vilalta-Clemente, A. J. Wilkinson (I08)
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Electron Channelling Contrast Imaging of
Extended Defects in III-Nitride Semiconductors
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09:20
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Amina Tandjaoui,
Th?cle Ribéri-Béridot, Nathalie Mangelinck-No?l, Guillaume Reinhart, Gabrielle Regula, Tamzin
Lafford, José Baruchel (O17)
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In Situ and Real-Time Combination of
X-Ray Radiography and Topography Towards Mastering of Si Growth
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09:45
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Alexander
Senichev, Vadim Talalaev, Igor V. Shtrom, Horst Blumtritt, George Cirlin,
Christoph Lienau, Peter Werner (O18)
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Correlated Nanospectroscopic Imaging and
Structural Analysis of Individual Beryllium-doped GaAs/AlGaAs Core-Shell
Nanowires
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10:10
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Coffee
Break
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Session 8: Grain
boundaries and interfaces
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Chairperson:
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10:40
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Takashi Sekiguchi, Karolin
Jiptner, Ronit R. Prakash, Jun Chen, Yoshiji Miyamura, Hirofumi Harada and
Koichi Kakimoto (I09)
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Control of extended defects in cast and
seed cast Si ingots for photovoltaic application
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11:30
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E. Hieckmann, M. Nacke,
M. Allardt, Y. Bodrov, P. Chekhonin and J. Weber (O19)
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Optical Behaviour, Electrical Activity
and Residual Strains of Grain Boundaries in Silicon
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11:55
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Y. Ohno, K. Inoue,
K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, H. Takamizawa, Y. Shimizu,
K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama (O20)
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Interactions of impurity atoms with ?3{111} and ?9{114} grain boundaries in silicon
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Lunch
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Afternoon:
Excursion
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Thursday
18th September
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Session 9:
Dislocations II
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Chairperson:
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08:30
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Benjamin Butz, Christian Dolle, Florian Niekiel,
Konstantin Weber, Daniel Waldmann, Bernd Meyer, Heiko B. Weber and Erdmann Spiecker (I10)
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Dislocations in Bilayer Graphene -
Materials Science meets Physics
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09:20
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Daniel Oriwol,
Hartmut S. Leipner, Andreas
N. Danilewsky, Lamine Sylla, Winfried Seifert, Martin Kittler, Jan Bauer (O25)
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Dislocation Cluster Formation in
Multicrystalline Silicon
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09:45
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A. Loshachenko, O. Vyvenko,
N. Vysotskii and O. Kononchuk (O22)
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Low Temperature Kinetics of Hydrogen
Interaction with Dislocations in Silicon
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10:10
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Coffee
Break
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Session 10:
Defect Dynamics
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Chairperson:
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10:40
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A.I. Kirkland, J Warner,
A Robertson and C Allen (I11)
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Structural Studies of Defects and Defect
Dynamics in Graphene
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11:30
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I. Yonenaga (O23)
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Twin Formation during Czochralski-growth
of Si and SiGe
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11:55
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I. Ratschinski, H. S. Leipner, N. Wüst, G.
Leibiger and F. Habel (O24)
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Motion of dislocations in freestanding
(0001) GaN single crystals
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12:20
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Moumita Ghosh, G Mohan
Rao and Michael Seibt (O25)
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Can undoped ZnO nanorod be
ultrahigh-piezoelectric?
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12:50
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Lunch
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Session 11:
Nanostructures
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Chairperson:
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14:30
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F. Panciera, Y.-C.
Chou, M. C. Reuter, K. Hoummada, D. Zakharov, E. A. Stach, D. Mangelinck, S.
Hofmann and F. M. Ross (I12)
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Nanoscale investigation of
metal-semiconductor thin films and nano-structures
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15:20
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Stefania
Carapezzi, Alessia Irrera, Vladimir Sivakov and Anna Cavallini (O26)
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Impact of Processing Conditions on the
Level Scheme of Silicon Nanowires Synthesized by Top-Down Techniques
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15:45
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A. Lotsari,
G.P. Dimitrakopulos, Th. Kehagias,
A. Adikimenakis, Ph. Komninou and A. Georgakilas (O27)
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Structural Analysis of Inclined GaN
Nanowires by TEM Techniques
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16:10
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Miao Yang, Nicolas
A. Mayer and Horst P. Strunk (O28)
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Resonant excitation of Tm luminescence
via quantum dots formed by spinodal decomposition in AlxIn1-xN
layers
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Conference Dinner
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Friday
19th September
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Session 12:
Group III nitrides
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Chairperson:
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08:30
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Daniel Alquier, S. Kone,
M. Portail, G. Gomme, M. Lamhamdi, W. Khalfaoui, G. Gautier, G. El Zammar, T.
Oheix, A. Yvon, J. Ladroue, E. Collard, Y. Cordier and F. Cayrel (I13)
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Growth and process induced defects in
GaN : effects on power devices
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09:20
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J. Kioseoglou, T.
Pavloudis, G. P. Dimitrakopulos, Th. Karakostas (O29)
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Structural Reconstructions of InxGa1-xN
Alloys
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09:45
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Imad Belabbas, Jun Chen
and Gérard Nouet (O30)
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Electronic
structure of threading dislocations in wurtzite GaN
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10:10
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Coffee
Break
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Session 13:
Opto-electronic properties
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Chairperson:
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10:40
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John Moseley, Stuart
Farrell, Harvey L. Guthrey, Wyatt K. Metzger, Richard K. Ahrenkiel, Mowafak
M. Al-Jassim (O31)
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Investigation of Structural Defect
Related Luminescence in CdTe with Low- Temperature Cathodoluminescene
Spectrum Imaging
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11:05
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M.K. Shakfa, M. Wiemer, P. Ludewig, K. Jandieri, K. Volz, W. Stolz, S. D.
Baranovskii, and M. Koch (O32)
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Two-energy-scale model for the description of
the thermal quenching of the photoluminescence in disordered GaAsBi
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11:30
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Daniela Cavalcoli,
B.Fraboni, G. Impellizzeri, L. Romano, E.Scavetta , M. G. Grimaldi (O33)
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Quantum confinement and light trapping
effects in nanoporous Ge
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11:55
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Martin Kittler, T.
Arguirov, M. Reiche, C. Krause and D. Mankovics (O34)
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About dislocation and oxygen related
luminescence of silicon around 0.8 eV
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12:20
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Closing remarks and farewell lunch
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