Analytical and Implantation Services for external users

We offer the following analytical and implantation services for external users
please contact us for availabilty and quotation


  • Conventional Rutherford backscattering element analysis of thin fillms
    - sensitivity down to 0.1 % or 1·1014 cm-2
    - analysis of heavier elements starting from B
    - depth resolution about 10 nm

  • RBS analysis HD

  • Rutherford backscattering element analysis of thin fillms using MeV protons with external beam
    - analysis of light elements elements starting like B,N,O
    - depth resolution about 100 nm

  • High resolution Rutherford backscattering element analysis of thin films
    - sensitivity down to 0.1 % or 1·1014 cm-2
    - analysis of heavier elements starting from B
    - depth resolution about 1-2 nm in surface near regions
    - sample size about 1mm2 to 1 cm2

  • PIXE element analysis using MeV proton beams
    --- proton induced X-ray emission ---
    - sensitivity down to several 10 ppm
    - analysis of all ements starting from Na
    - no depth resolution, anayzed thickness about 10-20 µm
    - analyzed sample area 1mm2
    - analysis time up to 2 minutes
    - no sample preparation is needed. We extract the protons into air of He atmosphere.
    - samples must be at least 1mm2 in diameter an can be very large
    - examples: coins, minerals, paintings, etal pieces, ceramics, jewellery, .....

  • Spodes Tower PIXE HD

  • PIGE element analysis of Fluorine using MeV proton beams
    - sensitivity down to several 100 ppm
    - analysis thrpugh detection of gamma radiation
    - no depth resolution, anayzed thickness about 10-20 µm
    - analyzed sample area 1mm2
    - analysis time up to several minutes
    - no sample preparation is needed. We extract the protons into air of He atmosphere.
    - samples must be at least 1mm2 in diameter an can be very large
    - examples: everything which might contain Fluorine

  • Light element depth profiling using a 2.5 MeV external proton beam
    - analysis of B, C, N, O with Non-rutherford backscattering
    - up to 100 times more sensitive compared to Rutherfordscattering with He
    - beam spot ca. 1 mm2
    - analysis depth up to 15 µm with resolution of few hundered nm

  • H profiling by Nuclear Reaction Analysis
    - analysis with 6.3 - 6.6 MeV 15N ion beam
    - sensitivity down to several ppm
    - depth resolution about 10 nm
    - sample size about 1 cm2

  • Hydrogen NRA HD

  • H profiling in µm thick films by Coincidence ERDA with MeV external proton beam
    - analysis with 2-3 MeV proton ion beam
    - depth resolution about 100 nm
    - analysis of free standing films or samples with thickness up to 10 µm
    - beam spot size about 1 mm2

  • Koinzidenz ERDA HD

  • Ultra-low energy ion irradiation and ion implantation with mass selected ions
    - energies from 30 keV down to 10 - 20 eV
    - nearly all ions, except Al,Si
    - available ion species: H,B,C,N,O,F,Ne,Ar,P,S,Mn,Se,Au,W and more
    - Fluences up to 1019 ions/cm2, typical fluence for 2D materials 1015 ions/cm2
    - sample size up to 18x18 mm2
    - implantation of TEM grids possible

  • ULE implantation of Cr  HD

  • Surface analysis using Auger spectroscopy
    - Electron energy 1 - 3 keV
    - sample size up to 18x18 mm2
    - analyzed area ca. 1 mm
    - sample transfer into UHV

  • Ion implantation
    - ion energies up to 900 keV at ion implanter
    - ion energies up to 9 MeV at Tandem accelerator
    - nearly all ions
    - implantated area up to 2x2 cm2
    - implantation at low Temperature (liquid nitrogen) possible

  • accelerator hall HD Ion accelerators HD

  • Low level gamma spectroscopy
    - analysis of low activities down to < 1 Bq/l for the isotpes
    - Cs-137, K-40, Co-60, Na-22
    - see page " Radioisotopes and environmental radioactivity"

  • low level lamma spectrometers

  • Atomic force microscopy

    PARK Systems XE-100

    - surface topography analysis
    - surface conductivity analysis using a conductive tip

  • Park Systems XE-100