Program



  • Richard Warburton (Uni Basel)
    "A quantum dot in an open microcavity as a fast and bright source of coherent single photons"

  • Debdeep Jena (Cornell University)
    "Ultra-high temperature epitaxy of 2D Boron Nitride and Graphene"

  • Amilcar Bedoya-Pinto (Max-Planck Institute of Microstructure Physics)
    "Topological semimetals and two-dimensional magnets grown by MBE: Crafting exotic physics into functional heterostructures"

  • Anna Fontcuberta i Morral (École Polytechnique Fédérale de Lausanne)
    "Selective area epitaxy of nanowires and networks: common mechanisms and differences between GaAs, Zn3P2 and Ge"


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Thursday 14.10.2021
08:50 - 09:00 Opening - Welcome
Session 1: Single Photon sources and QDs
09:00 - 09:45
invited
Richard Warburton
Univ. Basel
A quantum dot in an open microcavity as a fast and bright source of coherent single photons
09:45 - 10:00 Piotr A. Wronski
Univ. Würzburg
Metamorphic buffer layer based single-photon sources for application in quantum telecommunications
10:00 - 10:15 Christian Heyn
Univ. Hamburg
Local droplet etching for self-assembled quantum structures: influence of the process parameters
10:15 - 10:45 Coffee break and meet in breakout rooms
Session 2: Heterostructures for optical devices
10:45 - 11:00 Andreas Bader
Univ. Würzburg
Growth of Interband Cascade Detectors for Light Detection in the Mid Infrared Spectral Band
11:00 - 11:15 Alexander Dohms
Frauenhofer HHI
MBE-grown InP-based strain-free Semiconductor Saturable Absorber Mirror (SESAM) for ultrashort laser pulse generation at 1.56 μm
11:15 - 11:30 Maximilian Beiser
TU Wien
A novel method for strain balancing InAs based ICL growth
11:30 - 12:30 Lunch break
12:30 - 14:30 Poster Session and Company Exhibition
Session 3: 2D Materials and Oxides
14:30 - 15:15
invited
Debdeep Jena
Cornell University
Ultra-high temperature epitaxy of 2D Boron Nitride and Graphene
15:15 - 15:30 Eugenio Zallo
WSI, TU München
Large-area van der Waals Epitaxy of Monochalcogenide Based Materials
15:30 - 15:45 Hannah Genath
Univ. Hannover
Epitaxy of Gd2O3 layers on virtual SiGe substrates on Si(111)
15:45 - 16:00 Alex Karg
Univ. Bremen
Tin-catalyzed molecular beam epitaxy of Ga2O3
16:00 - 16:15 Wolfgang Braun
MPI Stuttgart
Thermal Laser Epitaxy of Metals and Oxides
16:15 - 16:45 Coffee break and meet in breakout rooms
Session 4: Topological Materials
16:30 - 17:15
invited
Amilcar Bedoya-Pinto
MPI Halle
(canceled) Topological semimetals and two-dimensional magnets grown by MBE: Crafting exotic physics into functional heterostructures
16:30 - 16:45 Rebecca Pons
MPI Stuttgart
Growth of Rare-Earth Nickelates by Oxide MBE
Friday 15.10.2021
Session 5: In-plane nanowires and networks
09:00 - 09:45
invited
Anna Fontcuberta i Morral
EPFL, Lausanne
Selective area epitaxy of nanowires and networks: common mechanisms and differences between GaAs, Zn3P2 and Ge
09:45 - 10:00 Daria V. Beznasyuk
Univ. Copenhagen
Twofold electron mobility enhancement via growth optimization of InAs selective area grown nanowires
10:00 - 10:15 Didem Dede
EPFL, Lausanne
Horizontal InAs Nanowire Growth on Templates
10:15 - 10:30 Gunjan P. Nagda
Univ. Copenhagen
Selective Area Growth of III-V Nanowires on High-Index GaAs Substrates
10:30 - 11:00 Coffee break and meet in breakout rooms
Session 6: Nanowires
11:00 - 11:15 Akhil Ajay
WSI, TU München
Highly uniform selective area epitaxy of non-VLS GaAsSb:Si nanowires
11:15 - 11:30 Gregor Koblmüller
WSI, TU München
Epitaxial type-I and type-II InAs-AlAsSb core-shell nanowires for on-chip mid-infrared emitters
Session 7: III-N Heterostructures
11:30 - 11:45 Jagadish Mahato
TU Braunschweig
Optical and structural properties of GaN/AlGaN Multi-Quantum Wells using Plasma Assisted MBE
11:45 - 12:00 S. Schmult
TU Dresden
Suppression of parasitic Conductivity in ultra-pure GaN/AlGaN Heterostructures by Carbon delta-Doping
12:00 - 12:10 Announcement - Closing

Poster Session
P01 Ahmed Alshaikh
Univ. Hamburg
Masked droplet etching for site-controlled quantum structures: concepts and simulations
P02 Miriam Giparakis
TU Wien
Growth, Design, and Characterisation of an InAs/AlAsSb-based QCD at 2.7 µm
P03 Ahsan Hayat
BTU Cottbus-Senftenberg
Ge-capped and uncapped Ge(1-y)Sn(y)/Si (001) quantum dots grown by Molecular Beam Epitaxy (MBE)
P04 Constantin Hilbrunner
Univ. Göttingen
Nucleation of hBN on HOPG in conventional MBE
P05 Shyjumon Ibrahimkutty
Rigaku Europe SE
Compound Semiconductor Material Evaluation by High Resolution X-ray Diffraction
P06 Stefania Isceri
TU Wien
Epitaxy of YbRh2Si2 on Ge(001)
P07 Marvin Jansen
FZ Jülich
Investigation and Characterization of ZnSe/ZnMgSe Multi-Shell Growth on Phase-Pure GaAs Nanowires
P08 Vinayakrishna Joshi
Univ. Kassel
Epitaxial growth of InP-based 1.3 µm quantum dots
P09 Anagha Kamath
HU Berlin
Catalyst free selective area growth of InP nanowires on Si nanotips
P10 Ranbir Kaur
Univ. Kassel
Telecom wavelength InP-based quantum dots: Growth and characterization
P11 Falco Meier
Univ. Paderborn
Selective area growth of cubic gallium nitride on 3C-silicon carbide (001)
P12 Kevin Meyer
TU Clausthal
Growth of GaN films for different UV photodetector concepts by MBE
P13 Jenny Norberg
Univ. Hannover
Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates
P14 Christoph Ringkamp
FZ Jülich
Selective Area Epitaxy of Bi-based 3D Topological Insulators on Sapphire
P15 Begüm Yavas Aydin
Univ. Würzburg
InGaAs Based Resonant Tunnelling Diodes Barrier and Spacer Layer Structure by Grown Gas Sources Molecular Beam Epitaxy
P16 Eugenio Zallo
WSI, TU München
Epitaxial growth capabilities for 2D layered materials and their heterostructures