Extended Defects in Semiconductors 2014


September 14-19,2014, Göttingen, Germany

The biennial conference series on Extended Defects in Semiconductors started with a meeting in Hünfeld, Germany, in 1978. Subsequent meetings took place in France, Greece, Great Britain, Germany, Italy, Poland, and Russia. EDS-2012 was held in Thessaloniki, Greece.
EDS-2014 targets at bringing together experts on fundamental and applied research on structural defects in current and future semiconducting material systems, their nanostructures and devices.

  • Thin films and heterostructures
  • Low-dimensional systems and related defects: semiconductor nanocrystals, quantum wells, quantum dots, nanowires
  • Interface structures and defect interaction
  • Extended defects in C-related materials (incl. graphen)
  • Doping-, irradiation-, and implantation-induced defects
  • Electronic structure of defects
  • Defect engineering, strain engineering
  • Mechanical properties and dislocation dynamics
  • Role of defects in opto-electronic and magnetic properties
  • Degradation mechanisms in semiconductor devices
  • Atomistic and multiscale simulations, modeling approaches of defects, interfaces and nanostructures
  • Advanced characterisation techniques and methods for the investigation of semiconductor materials, in-situ imaging and analysis
  • Semiconductor hybrid systems, e.g. for biological and medical applications
  • Interaction of point and extended defects, point defect agglomeration
  • Materials for solar energy conversion and energy storage