EDS2014

Conference History

This conference series started with the International Symposium on
Dislocations in Tetrahedrally Coordinated Semiconductors
in Hünfeld, Germany, in 1978. The foreword of the conference proceedings refers to earlier summer schools organized by the Polish Academy of Sciences:

"The Polish Academy of Sciences has sponsored a number of summer schools on Defects in Covalent Crystals during the last decade under the leadership of J. Auleytner. In this tradition the Akademie der Wissenschaften in Göttingen invited to this symposium in the Bonifatius-Kloster in Hünfeld which turned out to be very stimulating and timely...." (Journal de Physique, Colloque C-6, supplement au n° 6)

Subsequent meetings took place in France, Greece, Great Britain, Germany, Italy, Poland, and Russia:

1978 Hünfeld (Germany)
          Dislocations in Tetrahedrally Coordinated Semiconductors (Inauguration     
          conference - "EDS 1")
          H. Alexander (Köln), P. Haasen (Göttingen), R. Labusch (Clausthal),
          W. Schröter (Göttingen)

1980 Krynica (Poland)
          Defect induced phenomena in Semiconductors ("EDS 2")
          J. Auleytner (Warszawa)

1983 Aussois (France)
          Properties and Structure of Dislocations in Semiconductors ("EDS 3")
          J. Philibert, B. Sieber, A. Zozime (Meudon-Bellevue)

1986 Zvenigorod (USSR)
          Structure and Properties of Dislocations in Semiconductors ("EDS 4")
          Yu. A. Osip'yan (Chernogolovka)

1988 Szczyrk (Poland)
         Defects in Crystals ("EDS 5")
         J. Auleytner, T. Figielski, E. Kaczmarek, E. Mizera, T.Wosinski (Warszawa)

1989 Oxford (UK)
          Structure and Properties of Dislocations in Semiconductors ("EDS 6")
          P. B. Hirsch, G. R. Booker, D. B. Holt, J. L. Hutchison, S. G. Roberts,
          P. R. Wilshaw (Oxford)

1992 Holzhau (Germany)
         Structure and Properties of Extended Defects in Semiconductors (EDS 7)
         P. Haasen (Göttingen), H. Alexander (Köln), J. Auleytner (Warszawa),
        J.Heydenreich (Halle), W. Schröter (Göttingen)

1996 Giens (France)
         Extended Defects in Semiconductors (EDS 8)
         B. Pichaud (Marseille), S. Pizzini (Milano), A. Cavallini (Bologna),
         G. Vanderschaeve (Toulouse)

1998 Jaszowiec (Poland)
          Extended Defects in Semiconductors (EDS 9)
          T. Figielski (Warszawa), W. Schröter (Göttingen)

2000 Brighton (UK)
          Extended Defects in Semiconductors (EDS 10)
          M. Heggie (Brighton)

2002 Bologna (Italy)
         Extended Defects in Semiconductors (EDS 11)
         A. Cavallini (Bologna), V. V. Kveder (Chernogolovka), S. Pizzini (Milano)

2004 Chernogolovka (Russia)
         Extended Defects in Semiconductors (EDS 12)
         Yu. A. Osip'yan, V. V. Kveder (Chernogolovka)

2006 Halle (Germany)
         Extended Defects in Semiconductors (EDS 13)
         H. S. Leipner (Halle), M. Kittler (Frankfurt/Oder)

2008 Poitiers (France)
         Extended Defects in Semiconductors (EDS 13)
         J. Rabier (Poitiers), E. Le Bourhis (Poitiers)

2010 Brighton (UK)
         Extended Defects in Semiconductors (EDS 15)
         M. Heggie (Brighton), M. Skowronski (Pittsburgh)

2012 Thessaloniki (Greece)
         Extended Defects in Semiconductors (EDS 16)
         P. Komnino
2014 Göttingen (Germany)
         Extended Defects in Semiconductors (EDS 17)
         M. Seibt (Göttingen), M. Kittler (Cottbus)
2016  Les Issambres-St Aygulf (France)
         Extended Defects in Semiconductors (EDS 18)
         M. Legros, G. Regula