AG Hofsäss - II- Institute of Physics

Publications AG Hofsäss

Publications 2023


  • Optical Properties of MoSe2 Monolayer Implanted with Ultra-Low-Energy Cr Ions
    Minh N. Bui, Stefan Rost, Manuel Auge, Lanqing Zhou, Christoph Friedrich, Stefan Blügel, Silvan Kretschmer, Arkady V. Krasheninnikov, Kenji Watanabe, Takashi Taniguchi, Hans C. Hofsäss, Detlev Grützmacher, and Beata E. Kardynal, ACS Appl. Mater. Interfaces 2023, doi 10.1021/acsami.3c05366
  • Low energy ion-solid interactions: a quantitative experimental verification of binary collision approximation simulations
    Hans Hofsäss, Felix Junge, Patrick Kirscht and Koen Karl Frans van Stiphout, Material Research Express (2023) DOI 10.1088/2053-1591/ace41c
  • Lateral Controlled Doping and Defect Engineering of Graphene by Ultra-Low-Energy Ion Implantation
    Felix Junge, Manuel Auge, Zviadi Zarkua and Hans Hofsäss, Nanomaterials 13 (2023) 65
  • Bond defects in graphene created by ultralow energy ion implantation
    Renan Villarreal, Pin-Cheng Lin, Zviadi Zarkua, HarshBana, Hung-Chieh Tsai, Manuel Auge, Felix Junge, HansHofsäss, Ezequiel Tosi, Paolo Lacovig, Silvano Lizzit, StevenDe Feyter, Stefan De Gendt, Steven Brems, E. Harriet Ahlgren, and Lino M. C. Pereira, Carbon 203 (2023) 590

  • Publications 2022


    • Room‐Temperature 181 Ta(TiO2 ): An e‐γ TDPAC Study
      Ian Chang Jie Yap, Juliana Schell, Thien Thanh Dang, Cornelia Noll, Reinhard Beck, Ulli Köster, Ronaldo Mansano and Hans Christian Hofsäss
      Crystals 2022, 12, 946
    • Thermal Annealing of Graphene Implanted with Mn at Ultra-Low Energies: From Disordered and Contaminated to Nearly Pristine Graphene
      Lin, Pin-Cheng; Villarreal, Renan; Bana, Harsh; Zarkua, Zviadi; Hendriks, Vince; Tsai, Hung-Chieh; Auge, Manuel; Junge, Felix; Hofsäss, Hans; Tosi, Ezequiel; Lacovig, Paolo; Lizzit, Silvano; Zhao, Wenjuan; Di Santo, Giovanni; Petaccia, Luca; De Feyter, Steven; De Gendt, Stefan; Brems, Steven; Pereira, Lino M.C.
      The Journal of Physical Chemistry 126 (2022) 10494
    • Low-energy Se ion implantation in MoS2 monolayers
      Minh Bui, Stefan Rost, Manuel Auge, Jhih-Sian Tu, Lanqing Zhou, Irene Aguilera, Stefan Blügel, Mahdi Ghorbani-Asl, Arkady Krasheninnikov, Arsalan Hashemi, Hannu-Pekka Komsa, Lei Jin, Lidia Kibkalo, Eoghan O'Connell, Quentin Ramasse, Ursel Bangert, Hans Hofsäss, Detlev Grützmacher, and Beata Kardynal, Nature Partner Journals 2D materials and applications 6 (2022) 42
    • Introducing Ultra-Low Energy Ion Implantation of Radioactive Isotopes at ISOLDE, CERN for (Near-)Surface Characterization: the ASPIC and ASCII Vacuum Chambers
      Koen van Stiphout, Leonard-Alexander Lieske, Manuel Auge, Hans Hofsäss, Crystals 12 (2022) 626
    • Anomalies at the Dirac point in graphene and its hole-doped compositions
      Arindam Pramanik, Sangeeta Thakur, Bahadur Singh, Philip Willke, Martin Wenderoth, Hans Hofsäss, G. Di Santo, Luca Petaccia, and Kalobaran Maiti
      Physical Review Letters 128 (2022) 166401
    • Low temperature gaseous nitriding of Co-Cr alloys: Formation and decomposition of expanded phase
      Maryam Akhlaghi, Rainer Hock, Johannes Dallmann, Anna Krapf, Benoit Merle, Hans Hofsäss, Carolin Körner and Andreas Leineweber,
      J. alloys and compounds 907 (2022) 164535.
    • Binary collision approximation simulations of ion solid interaction without the concept of surface binding energies
      H. Hofsäss and A. Stegmaier, Nucl. Instr. Meth B 517 (2022) 49-62
    • Quantitative light element analysis: Complementary IBA methods for H to O detection using an external proton beam
      F. Junge, P. Kirscht, H. C. Hofsäss, Nucl. Instr. Meth. B 517 (2022) 16-23
    • Sputter hot filament hollow cathode ion source and its application to ultra-low energy ion implantation in 2D materials
      F. Junge, M. Auge, H. Hofsäss, Nucl. Instr. Meth. B 510 (2022) 63-68
    • Laterally controlled ultra-low energy ion implantation using electrostatic masking
      M. Auge, F. Junge, H. Hofsäss, Nucl. Instr. Meth.B 512 (2022) 96-101

    • Publications 2021>


      • Device for generating negative ions by impinging positive ions on a target
        H. Hofsäss, F. Lipp Bregolin, D. Yordanov, US patent 11,031,205, 08.06.2021
      • Doping Graphene with Substitutional Mn
        P.C. Lin, R. Villarreal, S. Achilli, H. Bana, M.N. Nair, A. Tejeda, K. Verguts, S. De Gendt, M. Auge, H. Hofsäss, S. De Feyter, G. Di Santo, L. Petaccia, S. Brems, G. Fratesi, L.M.C. Pereira, ACS Nano 15 (2021) 5449
      • Breakdown of Universal Scaling for Nanometer-Sized Bubbles in Graphene
        R. Villarreal, P.-C. Lin, F. Faraji, N. Hassani, H. Bana, Z. Zarkua, M. N. Nair, H.-C. Tsai, M. Auge, F. Junge, H. C. Hofsäss, S. De Gendt, S. De Feyter, S. Brems, E. H. Åhlgren, E. C. Neyts, L. Covaci, F. M. Peeters, M. Neek-Amal, and L. M. C. Pereira, Nano Lett. 21 (2021) 8103

      • Publications 2020>


        • A comprehensive study of charge transport in Au-contacted graphene on Ge/Si(001)
          A. Sinterhauf, S. Bode, M. Auge, M. Lukosius, G. Lippert, H.C. Hofsäss, M. Wenderoth, Appl. Phys. Lett 117 (2020) 023104
        • Upconversion photoluminescence of Ho3+-Yb3+ doped barium titanate nanocrystallites: Optical tools for structural phase detection and temperature probing
          M. K. Mahata, T. Koppe, K. Kumar, H. Hofsäss, U. Vetter, Scientific Reports 10 (2020) 8775
        • Using radioactive beams to unravel local phenomena in ferroic and multiferroic materials
          J. Schell, H. Hofsass, D.C. Lupascu, Nucl. Instr. Meth B 463 (2020) 134

        • Publications 2019


          • A hyperfine look at titanium dioxide
            J. Schell, D. Zyabkin, D.C. Lupascu, H.C. Hofsäss, M.O. Karabasov, A. Welker, P. Schaaf, AIP Advances 9 (2019) 085208
          • Prediction of ion-induced nanopattern formation using Monte Carlo simulations and comparison to experiments
            H. Hofsäss and O. Bobes, Appl. Phys. Reviews 6 (2019) 021307
          • Using radioactive beams to unravel local phenomena in ferroic and multiferroic materials
            J. Schell, H. Hofsäss, D. C. Lupasco, Nucl. Instr. Meth B 463 (2020) 134<\punkt>
          • Development of external coincidence ERDA: Hydrogen analysis of moist samples
            M. Saito, K. Holm, F. Bregolin, H. Hofsäss, Nucl. Instr, Meth B. 450 (2019) 304
          • External RBS/PIXE analysis for evaluating quantum dots internalization into HeLa cells
            M. Saito, S. Koike, K. Holm, F. L. Bregolin, H. Hofsäss, Nucl. Instr. Meth B 450 (2019) 173


          • Publications 2018


            • Temporal evolution on SiO2 surface under low energy Ar+-ion bombardment: Roles of sputtering, mass redistribution, and shadowing
              Kumar, Mohit; Datta, D. P. ; Basu, Tanmoy ; Garg , Sandeep; Hofsaess, Hans; Som, T, J.Phys. Cond. Matter (2018), 30 (2018) 334001,
            • External RBS analysis setup at University of Göttingen: RBS analysis for liquid samples
              M. Saito, K. Holm, H. Hofsäss, Surface and Interface Analysis 50 (2018) 1149
            • Neon ion beam induced pattern formation on amorphous carbon surfaces
              H. Hofsäss, K. Zhang, O.Bobes, AIP Advances 8 (2018) 025205
            • Local Plasmon Engineering in Doped Graphene
              F.S. Hage, T.P. Hardcastle, M.N. Gjerding, D.M. Kepaptsoglou, C.R. Seabourne,K. Winther, R. Zan, J. Amani, H. Hofsaess, U. Bangert, K.S. Thygesen, Q.M. Ramasse, ACS Nano 12 (2018) 1837
            • Evaluation of the radiation hazard for ion beam analysis using external proton beams
              H. Hofsäss, Nucl. Instr. Meth B 427 (2018) 53-59


            • Publications 2017


              • Ion beam modification of 2D materials - single implant atom analysis via annular dark field electron microscopy
                U. Bangert, A. Stewart, E. O'Connell, E. Courtney, Q. Ramasse, D. Kepatsoglou, H. Hofsäss, J. Amani, S. S. Tu, B. Kardynal, Ultramicroscopy 175 (2017), 021013
              • Single atom spectroscopy of phosphorous dopants implanted into graphene
                Toma Susi,Trevor P. Hardcastle,Hans Hofsäss, Andreas Mittelberger, Timothy J. Pennycook, Clemens Mangler,Rik Drummond-Brydson, Andrew J. Scott,Jannik C. Meyer, and Jani Kotakoski, 2D Mater. 4 (2017) 021013
              • Quadrupole lens alignment with improved STIM and secondary electron imaging for Proton Beam Writing
                S. Qureshi, P.S. Raman, A. Stegmaier, J. A. van Kan, Nucl. Instr. Meth. B 404 (2017) 74-80

              • Publications 2016


                • Temporal evolution of Ge surface topography under keV ion irradiation: Synergetic roles of curvature-dependent sputter erosion and atomic redistribution
                  D. P. Datta, S. K. Garg, T. Basu, B. Satpati, H. Hofsäss, D. Kanjilal, and T. Som, Appl. Surf. Sci 360 (2016) 131.
                • Ar ion beam induced surface pattern formation on Si
                  H. Hofsäss, O. Bobes, K. Zhang, J. Appl. Phys. 119 (2016) 035302
                • Nanoscale patterns produced by self-sputtering of solid surfaces: The effect of ion implantation
                  R.M. Bradley and H. Hofsäss, J. Appl. Phys. 120 (2016), 074302.
                • Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots
                  C. Rothfuchs, N. Kukharchyk, T. Koppe, M. Leroux, F. Semond,.S. Blumenthal, H.-W. Becker, D. J. As, H. C. Hofsäss, A. D. Wieck, A. Ludwig, Nucl. Instr. Meth. B 383 (2016) 1
                • Conducting ion tracks generated by charge-selected swift heavy ions
                  S. Gupta, H.G. Gehrke , J. Krauser, C. Trautmann, D. Severin, M. Bender, H. Rothard, H. Hofsäss, Nucl. Instr. Meth B 381 (2016) 76
                • Overview of band-edge and defect related luminescence in aluminum nitride
                  T. Koppe, H. Hofsäss, U. Vetter, J. Luminescence 178 (2016) 267
                • Photon-Upconverting Materials: Advances and Prospects for Various Emerging Applications
                  M. K. Mahata, H. Hofsäss, and U. Vetter, accepted for publication in "Luminescence" (Editor J. Thirumalai) ISBN 978-953-51-4864-7
                • Self-organized surface ripple pattern formation by ion implantation
                  H. Hofsäss, K. Zhang, O. Bobes, J. Appl. Phys 120 (2016) 135308
                • Demonstration of Temperature Dependent Energy Migration in Dual-Mode YVO4:Ho3+/Yb3+ Nanocrystals for Low Temperature Thermometry
                  M. K. Mahata, T. Koppe, K. Kumar, H. Hofsäss, U. Vetter, Scientific Reports6 (2016), 36342
                • Photon-Upconverting Materials: Advances and Prospects for Various Emerging Applications
                  M. K. Mahata, H. Hofsäss, and U. Vetter, in "Luminescence - An Outlook on the Phenomena and their Applications", Editor J. Thirumalai, Intech open science, 2016, ISBN 978-953-51-2763-5

                • Publications 2015


                  • Host Sensitized Luminescence and Time-Resolved Spectroscopy of YVO4: Ho3+ Nanocrystals
                    Manoj Kumar Mahata, Tristan Koppe, Hans Hofsäss, Kaushal Kumar, Ulrich Vetter, Physics Procedia 76 (2015) 125.
                  • Electrical conduction of ion tracks in tetrahedral amorphous carbon: Temperature, field and doping dependence and comparison with matrix data
                    J Krauser, H-G Gehrke, H Hofsäss, J Amani, C Trautmann, and A Weidinger, New J. Phys. 17 (2015) 123009.
                  • Electronic structure modification of ion implanted graphene: the spectroscopic signatures of p- and n-type doping
                    D.M. Kepaptsoglou, T.P. Hardcastle, C.R. Seabourne, U. Bangert, R. Zan, J. Amani, H. Hofsäss, R.J. Nicholls, R. Brydson, A.J. Scott and Q.M. Ramasse, ACS Nano (2015) DOI 10.1021/acsnano.5b05305
                  • Mössbauer Spectroscopy study of Surfactant Sputtering induced Fe Silicide formation on a Si surface
                    C. Beckmann, K. Zhang, H. Hofsäss, C. Brüsewitz, U. Vetter and K. Bharuth-Ram, Appl. Surf. Sci. 357 A (2015) 493.
                  • Instability of ferromagnetic nanoclusters in Fe implanted amorphous SiO2
                    K. Bharuth-Ram, T. B. Doyle, K. Zhang, H. Masenda and H. Hofsäss, Physics Procedia, ISM 2015 proceedings, Procedia 75 (2015) 565-571.
                  • Analysis of immittance spectra: Finding unambiguous electrical equivalent circuits to represent the underlying physics
                    Julian Alexander Amani, Tristan Koppe, Hans Hofsäss, and Ulrich Vetter, Physical Review Aplied 4 (2015) 044007.
                  • Incorporation of Zn2+ ions into BaTiO3 :Er3+ /Yb3+ nanophosphor: an effective way to enhance upconversion, defect luminescence and temperature sensing
                    M. K. Mahata, T. Koppe, T. Mondal, C. Brüsewitz, K. Kumar, V. K. Rai, H. Hofsäss and Ulrich Vetter, Phys. Chem. Chem. Phys. 17 (2015) 20741-20753
                  • Doping of Graphene by Low-Energy Ion Beam Implantation: Structural, Electronic and Transport Properties
                    Philip Willke, Julian A. Amani, Anna Sinterhauf, Sangeeta Thakur , Thomas Kotzott, Steffen Weikert, Kalobaran Maiti, Hans Hofsäss, Martin Wenderoth, Nano Letters 15 (2015) 5110.
                  • Tests of the Modified Sigmund Model of Ion Sputtering using Monte Carlo Simulations
                    H. Hofsäss, R. M. Bradley, J. Appl. Phys. 117 (2015) 174310
                  • Model for roughening and ripple instability due to ion-induced mass redistribution [Addendum to H. Hofsäss, Appl. Phys. A 114 (2014) 401, ?Surface instability and pattern formation by ion-induced erosion and mass redistribution?]
                    H. Hofsäss, Appl. Phys. A 119 (2015) 687
                  • Determination of gradient elastic tensors: stress and strain dependencies of electric field gradients in cubic and hexagonal systems
                    C. Brüsewitz, U. Vetter, H. Hofsäss, J. Phys.: Cond. Matter 27 (2015) 055401.



                  Publications 2014


                  • Identifying and object in a forgery proof way
                    H. Hofsäss, K. Zhang, O. Bobes, M. Nagl, US Patent 14/190,773, EFS ID 18310557, 26.2.2014
                  • Designing Si surface nanopatterns by low energy ion beams with metal surfactant sputtering
                    K. Zhang, O. Bobes, H. Hofsäss, Nanotechnology 25 (2014) 085301
                  • Modeling electrochemical etching of proton irradiated p-GaAs for the design of MEMS building blocks
                    T. Koppe, C. Rothfuchs, M. Schulte-Borchers, H. Hofsaess, H. Boudinov, U. Vetter, IEEE Journal of Microelectromechanical Systems, 2014
                  • A Modification to the Sigmund Model of Ion Sputtering
                    R. M. Bradley, H. Hofsäss, J. Appl. Phys. 116 (2014) 234304
                  • Short-range ordering of ion-implanted nitrogen atoms in SiC-graphene
                    P. Willke, J. A. Amani, S. Thakur, S. Weikert, T. Druga, K. Maiti, H. Hofsäss, and M. Wenderoth, Appl. Phys. Lett. 105 (2014) 111605
                  • Stopping power of liquid water for carbon ions in the energy range between 1 MeV and 6 MeV
                    J. Rahm, W. Y. Baek, H. Rabus, H. Hofsäss, Physics in Medicine and Biology 59 (2014) 3683
                  • Simulation of ion beam sputtering with SDTrimSP, TRIDYN and SRIM
                    H. Hofsäss, K. Zhang, A. Mutzke, Appl. Surf. Sci. 310 (2014) 134.
                  • Perturbed angular correlation studies of uniaxial compressive stressed zinc, titanium, rutile, Ti2AlN, and Nb2AlC
                    C. Brüsewitz, U. Vetter, H. Hofsäss and M.W. Barsoum, Journal of Physics: Condensed Matter 26 (2014) 295501
                  • Surface instability due to ion-induced mass transport and erosion
                    H. Hofsäss, Appl. Phys. A 114 (2014) 401-422



                  Publications 2013


                  • Surface instability due to ion-induced mass transport and erosion
                    H. Hofsäss, Appl. Phys. A (2013), open access DOI: 10.1007/s00339-013-8170-9
                  • Ion implantation of graphene - towards IC compatible technologies
                    U. Bangert, W. Pierce, D. M. Kepaptsoglou, Q. Ramasse, R. Zan, M. H. Gass, J. Van den Berg, C. Boothroyd, J. Amani, H. Hofsäss, Nano Letters 13 (2013) 49029
                  • Propagation of ripple patterns on Si during ion bombardment
                    H. Hofsäss, K. Zhang, H.G. Gehrke, C. Brüsewitz, Phys. Rev. B 88 (2013) 0754269
                  • Investigation of the effect of low energy ion beam irradiation on monolayer graphene
                    Yijun Xu, Kun Zhang, C.Brüsewitz, X. Wu, H. Hofsäss, AIP Advances 3, 072120 (2013).9
                  • Single crystal pillar microcompression tests of the MAX phases Ti2InC and Ti4AlN3
                    C. Brüsewitz; I. Knorr; H. Hofsäss; M. W. Barsoum; C. A.Volkert, Scripta Materialia 69 (2013) 3039
                  • A new tool for the search of nuclear decay cascades with specific properties based on the Evaluated Nuclear Structure Data Files
                    M. A. Nagl, M.A. Barbosa, U. Vetter, J. G. Correia, H. C. Hofsäss, Nucl. Instr. Meth A 726 (2013) 179
                  • Conductive tracks of 30 MeV C60 clusters in doped and undoped tetrahedral amorphous carbon
                    J. Krauser, H.-G. Gehrke, H. Hofsäss, C. Trautmann, A. Weidinger, Nucl. Instr. Meth. B 307 (2013) 265.9
                  • Enhanced resputtering and asymmetric interface mixing in W/Si multilayers
                    C. Eberl, T. Liese, F. Schlenkrich,F. Döring, H. Hofsäss, H.-U. Krebs, Appl. Phys. A , DOI 10.1007/s00339-013-7587-59
                  • Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties
                    M. Popovi?, M. Novakovi?, A. Traverse, K. Zhang, N. Bibic, H. Hofsäss, and K. P. Lieb, Thin Solid Films 531 (2013) 1899
                  • Is sputtering relevant for ion-induced self-organized pattern formation?
                    Hans Hofsäss, Omar Bobes and Kun Zhang , CAARI 2012 AIP Conf. Proceedings 1525, 21st Int. Conf. on the Application of Accelerators in Research & Industry (CAARI), Floyd D. McDaniel and Barney L. Doyle (Editors), 2013, 386-391; doi:http://dx.doi.org/10.1063/1.48023569
                  • The role of phase separation for self-organized surface pattern formation by ion beam erosion and metal co-deposition
                    H. Hofsäss, K. Zhang, A. Pape, O. Bobes, and M. Brötzmann, Appl. Phys. A: Materials Science and Processing 111 (2013), 653-664; DOI 10.1007/s00339-012-7285-89



                  Publications 2012


                  • Conductivity enhancement of ion tracks in tetrahedral amorphous carbon by doping
                    J. Krauser, A.-K. Nix, H.-G. Gehrke, H. Hofsäss, C. Trautmann, A. Weidinger, Nucl. Instr. Meth B 272 (2012) 280
                  • 3D microstructuring in p-GaAs with proton beam writing using multiple ion fluences
                    M.Schulte-Borchers, U. Vetter, T. Koppe and H. Hofsäss, J. Micromech. Microeng. 22 (2012) 025011
                  • Sharp transition from ripple patterns to a flat surface for ion beam erosion of Si with simultaneous co-deposition of iron
                    Kun Zhang, Marc Brötzmann, Hans Hofsäss, AIP Advances 2, 032123 (2012)
                  • Analysis of the spectra of trivalent erbium in multiple sites of hexagonal aluminum nitride
                    John B. Gruber, Ulrich Vetter, Gary W. Burdick, Zackery D. Fleischman, Larry D. Merkle, Takashi Taniguchi, Yuan Xiaoli, Takashi Sekiguchi, Daniel Jürgens, and Hans Hofsäss, Optical Materials Express 2 (2012) 1186
                  • Crystal field and Zeeman splittings for energy levels of Nd3+ in hexagonal AlN
                    John B. Gruber, Gary W. Burdick, Ulrich Vetter, Brian Mitchell, Volkmar Dierolf, Hans Hofsäss, Optical Materials Express 2 (2012) 1176
                  • Ion beam induced surface patterns due to mass redistribution and curvature dependent sputtering
                    Omar Bobes, Kun Zhang and Hans Hofsäss, 2012, Phys. Rev B 86 (2012) 235414
                  • Nano-hillock formation in diamond-like carbon induced by swift heavy projectiles in the electronic stopping regime: experiments and atomistic simulations
                    D. Schwen,E. Bringa, J. Krauser, A. Weidinger, C. Trautmann,and H. Hofsäss, Appl. Phys. Lett. 101 (2012) 113115



                  Publications 2011


                  • Electric fie3ld gradient of 111In/111Cd atoms at A-lattice sites in 211-MAX phases
                    D. Jürgens, C. Brüsewitz, H.-G. Gehkre, H. Hofsäss, M. Nagl, M. Uhrmacher, U. Vetter, J. Mestnik-Filho, M.W. Barsoum, J Phys. C: cond. mat. 23 (2011) 505501
                  • Tuning the conductivity of vanadium dioxide on silicon by swift heavy ion irradiation
                    H. Hofsäss, P. Ehrhardt, H.-G. Gehrke, M. Brötzman, U.Vetter, K.Zhang, J. Krauser, C.Trautmann, C. Ko, S. Ramanathan, AIP Advances 1 (2011) 032168
                  • Conductive ion tracks in tetrahedral amorphous carbon by 30 MeV C60 irradiation
                    J. Krauser, A.-K. Nix, H.-G. Gehrke, H. Hofsäss, C. Trautmann, A. Weidinger, New Journal of Physics 13 (2011) 083023
                  • Thickness dependence of the magnetic properties of ripple-patterned Fe/MgO(001) films
                    F. Büttner, K. Zhang, H. Hofsäss, S. Seyffarth, T. Liese, H.-U. Krebs, C. Vaz, Phys. Rev. B 84 (2011) 064427
                  • Spectroscopic analysis of Eu3+ in single-crystal hexagonal phase AlN
                    J. B. Gruber, U. Vetter, T. Taniguchi, G. W. Burdick, H. Hofsäss, S. Chandra, and D. K. Sardar, J. Appl Phys. 110 (2011) 023104
                  • First results of ab initio simulations of scintillation detector characteristics
                    A. Krille, M. Nagl, U. Vetter, H. Hofsäss and R. Krause-Rehberg, J. Phys.: Conference Series 262 (2011) 012033
                  • Surfactant driven self-organized surface patterns by ion beam erosion
                    K. Zhang, M. Brötzmann, H. Hofsäss, New. Journal of Physics 13 (2011) 013033
                  • Effective redution of AlN defect luminescence by ion implantation of light elements
                    Ulrich Vetter, Sven Müller, Marc Brötzmann, and Hans Hofsäss, Diam. Relat. Mater. 20 (2011) 782
                  • Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay
                    M. Novakovic, K. Zhang, M. Popovic, N. Bibic, H. Hofsäss, K.P. Lieb, Nucl. Instr. Meth B 269 (2011) 881



                  Publications 2010


                  • Modeling the diode characteristics of boron nitride/silicon carbide heterojunctions
                    M. Brötzmann, H.-G. Gehrke, U. Vetter, and H. Hofsäss, Appl. Phys. Lett. 97 (2010) 103505
                  • A new all-digital time differential g-g angular correlation spectrometer
                    M. Nagl, U. Vetter, M. Uhmacher, H. Hofsäss, Rev. Sci. Instr. 81(2010) 073501
                  • Bimodal range distributions of low-energy carbon ions in tetrahedral amorphous carbon
                    P. Neumaier, A. Bergmaier, W. Eckstein, R. Fischer, H. Hofsäss, H. U. Jäger, H. Kröger, C. Ronning and G. Dollinger, Europhys. Lett. 90 (2010) 46002
                  • Nanoscale metal-silicide films prepared by surfactant sputtering and analyzed by RBS
                    K. Zhang, H. Hofsäss, and H. Zutz , Nucl. Instr. Meth. B 268 (2010) 1967
                  • Perturbed angular correlation studies of the MAX phases Ti2AlN and Cr2GeC using ion implanted 111In as probe nuclei
                    D. Jürgens, M. Uhrmacher, H. Hofsäss, Jose Mestnik-Filho, M. Barsoum, Nucl. Instr. Meth. B 268 (2010) 2185
                  • Self-Aligned Nanostructures Created by Swift Heavy Ion Irradiation
                    H. G. Gehrke, A. K. Nix, J. Krauser, C. Trautmann, A. Weidinger and H. Hofsäss, J. Appl. Phys. 107 (2010) 094305



                  Publications 2009


                  • ta-C hetero junction diodes with apparent large ideality factors
                    M. Brötzmann, U. Vetter, H. Hofsäss, Phys. Stat Sol C 7 (2010) 256
                  • p-type conduction in beryllium-implanted hexagonal boron nitride films
                    B. He, W. J. Zhang,_ Z. Q. Yao, Y. M. Chong, Y. Yang, Q. Ye, X. J. Pan, J. A. Zapien, I. Bello, S. T. Lee, I. Gerhards, H. Zutz, and H. Hofsäss, Appl. Phys. Lett. 95 (2009) 252106
                  • A Search for Magnetic Effects in Ion Implanted ZnO and SiC
                    K. Bharuth-Ram, T. B. Doyle, H. Hofsäss, S. Müller, C. Ronning, AIP Conf. Proc. 1194 (2009) 80
                  • Ion Solid Interaction
                    H. Hofsäss, in: Ion Beam, Photon and Hyperfine Methods in Nano-Structured Materials, Erasmus Intensive Programme 2009, (edition winterwork, Grimma, 2009) pp. 107-139 ISBN 978-3-940167-94-1
                  • BN/ZnO hetero junction diodes with apparent giant ideality factors
                    M. Brötzmann, U. Vetter, H. Hofsäss, J. Appl. Phys. 106 (2009) 063704
                  • Structure and Defects of Epitaxial Si (111) Layers on Y2O3(111)/Si(111) Support Systems
                    C. Borschel, C. Ronning, H. Hofsäss, A. Giussani, P. Zaumseil, C. Wenger, and T. Schroeder, JVST 27 (2009) 305
                  • Fundamentals of Surfactant Sputtering
                    H. Hofsäss and K. Zhang, Nucl. Instr. Meth. B 267 (2009) 2731
                  • Self-organized formation of layered carbon-copper nanocomposite films by ion deposition
                    H. Zutz, D. Lyzwa, C.Ronning, M. Seibt and H. Hofsäss, Nucl. Instr. Meth. B 267 (2009) 1356
                  • Nanostructured carbide surfaces prepared by surfactant sputtering
                    H. Hofsäss, K. Zhang and H. Zutz, Nucl. Instr. Meth. B 267 (2009) 1398
                  • Simulation and Fitting of High Resolution Rutherford Backscattering Spectra
                    C. Borschel, M. Schnell, C. Ronning and H. Hofsäss, Nucl. Instr. Meth. B 267 (2009)1737
                  • Track etched Nanopores in spin-coated polycarbonate films applied as sputtering mask
                    A.-K. Nix, H.-G. Gehrke, J. Krauser, C. Trautmann, A. Weidinger, H. Hofsäss, Nucl. Instr. Meth B 267 (2009) 1032
                  • Morphology of Si surface sputter-eroded by low-energy Xe-ions at glancing incident angle
                    H. Hofsäss, K. Zhang, F. Rotter, M. Uhrmacher, C. Ronning, J. Krauser, Surf. Coat. Technol. 203 (2009) 2395



                  Publications 2008


                  • Ion track lithography and graphitic nanowires in diamond-like carbon
                    J. Krauser, A.-K. Nix, H.-G. Gehrke, H. Hofsäss, C. Trautmann, A. Weidinger, F. Wünsch, J. Bruns, J. Vac. Sci Technol 26 (2008) 2468
                  • Comparative study of self-assembling of multilayers using reactive sputter deposition and mass selective ion beam deposition
                    Wan-Yu Wu, Jyh-Ming Ting, H. Zutz, D. Lyzwa, I. Gerhards, C. Ronning, H. Hofsäss, Diam. Relat. Mater. 17 (2008) 1494
                  • Surfactant Sputtering
                    H. Hofsäss and K. Zhang, Appl. Phys. A: Materials Science and Processing 92 (2008) 517
                  • Magnetic texturing of ferromagnetic thin films by sputtering induced ripple formation
                    K. Zhang, M. Uhrmacher, J. Krauser, H. Hofsäss, J. Appl. Phys. 103 (2008) 083507
                  • Electric field gradients at 151Eu sites in GaN
                    K. Bharuth-Ram, H. Hofsäss and C. Ronning, Hyp. Int. 184 (2008) 213
                  • Actual concepts of digital PAC spectroscopy
                    J. Röder, C. Herden, J.A. Gardner, K.-D. Becker, M. Uhrmacher, H. Hofsäss, Hyp. Int. 181 (2008) 131-139
                  • Ion tracks for Nanotechnology
                    J. Krauser, H. Hofsäss, C. Trautmann, A. Weidinger, Festschrift "15 Jahre Hochschule Harz", Herausgeber Hochschule Harz, Verlag Koch, Halberstadt, März 2008, Seite 78-86, ISBN978-3-00-022117-0



                  Publications 2007


                  • First PAC Experiments in MAX-Phases
                    D. Jürgens, M. Uhrmacher, H. Hofsäss, J. Röder, P. Wodniecki, A. Kulinska, M. Barsoum, Hyp. Int. 178 (2007) 23-30
                  • Method and Apparatus for Surface Treatment by Combined Particle Irradiation
                    H. Hofsäss and K. Zhang, US provisional patent application 61/017,319, Dec. 2007
                  • Self-organized nanoscale multilayer growth during the deposition of hyperthermal species
                    H. Zutz, I. Gerhards, C. Ronning, H. Hofsäss, M. Seibt, W.Y. Wu, J.-M. Ting, Rev. Adv. Mat. Sci. 15 (2007) 241
                  • Ion induced nanoscale surface ripples on ferromagnetic thin films with correlated magnetic texture
                    K. Zhang, F. Rotter, M. Uhrmacher, C. Ronning, H. Hofsäss, J. Krauser, New J. Phys. 9 (2007) 29
                  • X-ray absorption studies on cubic boron nitride thin films
                    X. T. Zhou, T. K. Sham, W. J. Zhang, C. Y. Chan, I. Bello, S. T. Lee, H. Hofsäss, J. Appl. Phys. 101 (2007) 013710
                  • Unambiguous identification of the PL-I9-line in zinc oxide
                    S. Müller, D. Stichtenoth, M. Uhrmacher, H. Hofsäss, C. Ronning, A. Kulinska, J. Röder, Appl. Phys. Lett. 90 (2007) 012107
                  • Morphological change of carbon surfaces by sputter erosion
                    K. Takahiro, K. Zhang, F. Rotter, D. Schwen, C. Ronning, H. Hofsäss, J. Krauser, Nucl. Instr. Meth B 256 (2007) 378
                  • Pattern formation by Sputter erosion of Si- and C-surfaces
                    K. Zhang, F. Rotter, M. Uhrmacher, C. Ronning,, H. Hofsäss, J. Krauser, Surf. Coat. Technol. 201 (2007) 8299
                  • Sputter erosion of ferromagnetic thin films
                    H. Hofsäss, F. Rotter, M. Uhrmacher, K. Zhang, C. Ronning, J. Krauser, Surf. Coat. Technol. 201 (2007) 8477
                  • Electronic Properties of Graphite-Like Ion Tracks in Insulating Tetrahedral Amorphous Carbon
                    Anne-Katrin Nix, Daniel Schwen, Carsten Ronning, Johann Krauser, Christina Trautmann and Hans Hofsäss, Rev. Adv. Mater. Sci. 15 (2007) 192



                  Publications 2006


                  • Swift heavy ion irradiation for recovery from implantation defects in GaN
                    A.-K. Nix, H. Höfsäss, S. Müller, C. Ronning, A. Kamarou, E. Wendler, W. Wesch, C. Trautmann , GSI Scientific Report 2006 (ISSN: 0174-0814), Materials-11, p.319
                  • Crystal field analysis of Pm3+ (4f4) and Sm3+ (4f5) and lattice location studies of 147Nd and 147Pm in w-AlN
                    U. Vetter, J.B. Gruber, A.S. Nijjar, B. Zandi, G. Öhl, U. Wahl, B. de Vries, H. Hofsäss, M. Dietrich, ISOLDE Collaboration , Phys. Rev. B 74 (2006) 205201
                  • Cubic phase content and structure of BN films from X-ray absorption study
                    X. T. Zhou, T. K. Sham, W. J. Zhang, C. Y. Chan, I. Bello, S. T. Lee, H. Hofsäss, Analytical Chemistry A 78 (2006) 6314
                  • Effect of substrate surface on the structure and electronic properties of cubic boron nitride films
                    X. T. Zhou, T. K. Sham, C. Y. Chan, W.J. Zhang, I. Bello, S. T. Lee, H. Hofsäss, J. Appl. Phys. 100 (2006) 014909
                  • Luminescence Centers in silica nanowires
                    N. G. Shang, U. Vetter, I. Gerhards, H. Hofsäss and M. Seibt, Nanotechnology 17 (2006) 3215
                  • Conductive Nanoscopic Ion-Tracks in Diamond-Like-Carbon
                    J.-H. Zollondz, D. Schwen, A.-K. Nix, C. Trautmann, J. Berthold, J. Krauser, H. Hofsäss, Mat. Sci. Eng. C 26 (2006) 1171-1174
                  • Preferable orientation of turbostratic BN basal planes from an X-ray absorption study
                    X. T. Zhou, T. K. Sham, C. Y. Chan, W. J. Zhang, I. Bello, S. T. Lee, F. Heigl, A. Jürgenen, H. Hofsäss, J. Mat. Res. 21 (2006) 147-152
                  • Self-assembled nano-scale multilayer formation using physical vapor deposition methods
                    C. Ronning, I. Gerhards, M. Seibt, H. Hofsäss, W.Y. Wu, J. M. Ting, Nucl. Instr. Meth. 242 (2006) 261-264
                  • The effect of substrate surface roughness on the nucleation of cubic boron nitride films
                    C.Y. Chan, S. Eyhusen, X.M. Meng, I. Bello, S.T. Lee, C. Ronning and H. Hofsäss, Diam. Relat. Mater. 15 (2006) 55-60



                  Publications 2005


                  • Sputter erosion of ferromagnetic thin films
                    F. Rotter, K. Takahiro, K. Zhang, M. Uhrmacher, J. Krauser, H. Hofsäss, SMMIB2005, to be published
                  • Pattern formation by Sputter erosion of Si- and C-surfaces
                    F. Rotter, K. Takahiro, K. Zhang, M. Uhrmacher, J. Krauser, H. Hofsäss, SMMIB2005, to be published
                  • Kubisches Bornitrid ? Die bessere Alternative zu Diamant
                    in ?Wissenschaftsmagazin GEORGIA AUGUSTA?, Präsident der Universität Göttingen in Zusammenarbeit mit dem Universitätsbund Göttingen e.V. (Ed.), (Rothe Graphik, Georgsmarienhütte, 2005) ISSN 0016-8157, submitted
                  • Cubic boron nitride thin film growth by boron and nitrogen ion implantation
                    S. Eyhusen, C. Ronning, and H. Hofsäss, Phys. Rev. B (2005) in print.
                  • Self-assembled nano-scale multilayer formation using physical vapor deposition methods
                    C. Ronning, I. Gerhards, M. Seibt, H. Hofsäss, W.Y. Wu, J. M. Ting, IBMM2004, Nucl. Instr. Meth., in print
                  • The effect of surface roughness on the phase purity of cubic boron nitride films
                    C.Y. Chan, S. Eyhusen, X.M. Meng, I. Bello, S.T. Lee, C. Ronning and H. Hofsäss, Diam. Relat. Mater. (2005) in print
                  • Range distributions of low-energy carbon ions as a base for subplantation growth models
                    P. Neumaier, G. Dollinger, A. Bergmaier, W. Eckstein, R. Fischer, L. Görgens, H. Hofsäss, H. U. Jäger, H. Kröger, C. Ronning, Nature Materials (2004) submitted
                  • EELS and XPS Studies on the Stucture of Carbon Materials Amorphized By Ion Irradiation
                    K. Takahiro, Daniel Schwen, Carsten Ronning, Hans Hofsäss, SMMIB2005, to be published
                  • Conductive Nanoscopic Ion-Tracks in Diamond-Like-Carbon
                    J.-H. Zollondz, D. Schwen, A.-K. Nix, C. Trautmann, J. Berthold, J. Krauser, H. Hofsäss, EMRS-2005, to be published
                  • Ion accelerator facilities at the University Göttingen
                    M. Uhrmacher and H. Hofsäss, ECAART-2004, Nucl. Instr. Meth. B, in print
                  • Nucleation Mechanism of the Seed of Tetrapod ZnO Nanostructures
                    C. Ronning, N. G. Shang, I. Gerhards, H. Hofsäss and M. Seibt, J. Appl. Phys 98 (2005) 034307
                  • Cubic phase content and structure of BN films from X-ray absorption study
                    X. T. Zhou, T. K. Sham, W. J. Zhang, C. Y. Chan, I. Bello, S. T. Lee, H. Hofsäss, J. Appl. Phys. (2005) to be published
                  • Preferable orientation of turbostratic BN basal planes from an X-ray absorption study
                    X. T. Zhou, T. K. Sham, C. Y. Chan, W. J. Zhanga), I. Bello, S. T. Lee, F. Heigl, A. Jürgenenn, H. Hofsäss, J. Appl. Phys. (2005) submitted
                  • Effect of substrate surface on the structure and electronic properties of cubic boron nitride film
                    X. T. Zhou, T. K. Sham, C. Y. Chan, W.J. Zhang, I. Bello, S. T. Lee, H. Hofsäss, J. Appl. Phys. (2005) submitted
                  • Miss MaRPel ? a 3 MV pelletron accelerator for hydrogen depth profiling
                    M. Uhrmacher and H. Hofsäss, J. Alloys and compounds (2005), in print
                  • Electron Emission Channeling: Electron microscopy upside-down
                    H. Hofsäss, in: Microstrcture Analysis in the Materials Science, Freiberger Forschungshefte B331 Werkstoffwissenschaft, D. Rafaja, S. Unterricker, R. Kleeberg (Hrsg.), (Technische Universität Bergakademie Freiberg, 2005) p.4 ; ISBN 3 86012-256-8


                    • Publications 2004


                      • Ion Beam Deposition of Thin Films: Growth Processes and Nanostructure Formation
                        H. Hofsäss, Invited Lecture, Symposium on the Physics of Ionoized Gases, SPIG-2004, Tara, Serbia & Montenegro, AIP Conference Proceedings 740 (2004) 101-116
                      • On the Mechanisms of Cubic Boron Nitride Film Growth
                        H. Hofsäss, S. Eyhusen and C. Ronning, Diam. Relat. Mater. 13 (2004) 1103-1110
                      • Self-organized Nanoscale Multilayer Growth in Hyperthermal Ion Deposition
                        I. Gerhards, H. Stillrich, C. Ronning, H. Hofsäss and M. Seibt, Phys. Rev. B 70 (2004) 245418
                      • Field emission studies on swift heavy ion irradiated tetrahedral amorphous carbon
                        D. Schwen, C. Ronning, H. Hofsäss, H. Zollondz, A. Weidinger, C. Trautmann, Diam. Relat. Mater. 13 (2004) 1032
                      • The role of ion energy on the growth mechanism of cubic boron nitride films
                        S. Eyhusen, C. Ronning, and H. Hofsäss, Thin Solid Films 447-448 (2004) 125
                      • Visible cathodoluminescence from Eu-implanted single and polycrystal c-BN annealed under high temperature, high pressure conditions.
                        U. Vetter, H. Hofsäss, T. Taniguchi, Appl. Phys. Lett. 84 (2004) 4286
                      • Lithium insertion into In2S3 studied by perturbed gg-angular correlation
                        A. Kulinska, M. Uhrmacher, R. Dedryvère, A. Lohstroh, H. Hofsäss, K. P. Lieb, A. Picard-Garcia, J.-C. Jumas, J. Solid State Chem. 177 (2004) 109
                      • Spectra and energy levels of Gd3+(4f7) in AlN.
                        J.B. Gruber, U. Vetter, H. Hofsäss, B. Zhandi, M.F. Reid, Phys. Rev. B 69 (2004) 195202.
                      • Cathodoluminescence versus dynamical epitaxy of Ba-ion implanted quartz
                        S. Dhar, S. Gasiorek, P. Sahoo, U. Vetter, H. Hofsäss, V.N. Kulkarni, K.P. Lieb, Appl. Phys. Lett. 85 (2004) 1341



                      Publications 2003


                      • Quantenpunkt aus elektrisch leitendem Kohlenstoff,Verfahren zur Herstellung und Anwendung
                        A. Weidinger, J.-H. Zollondz, J. Krauser, B. Mertesacker, H. Hofsäss, Deutsches Patent Nr. 103 06 076 vom 08.02.2003
                      • Erforschung kondensierter Materie mit nuklearen Sonden und Ionenstrahlen an Großforschungsanlagen in Deutschland : Status und Perspektiven
                        Herausgeber: Komitee für Forschung mit nuklearen Sonden und Ionenstrahlen (Vorsitzender: H. Hofsäss), FORMAT Druck und Satz, Berlin, 2003, ISBN 3-00-011634-5
                      • Physik mit Ionenstrahlen : innovative Forschung in Deutschland
                        Herausgeber: H. Hofsäss, C. Ronning, W. Möller, H. Homeier, B. Stritzker, J. Lindner, Druckhaus Fromm, Osnabrück, 2003
                      • Diffusion in diamond-like carbon
                        H. Kröger, C. Ronning, H. Hofsäss, P. Neumaier, A. Bergmaier, L. Görgens, G. Dollinger, Diam. Relat. Mater. 12 (2003) 2042
                      • Phase formation of boron nitride thin films under the influence of impurity atoms
                        C. Ronning, S. Eyhusen, H. Hofsäss, Diam. Relat. Mater. 12 (2003) 1173
                      • Conductivity of ion tracks in diamond-like carbon films
                        J.-H. Zollondz, J. Krauser, A.Weidinger, C. Trautmann, D. Schwen, C. Ronning, H. Hofsäss, B. Schultrich, Diam. Relat. Mater. 12 (2003) 938
                      • Europium doping of c-BN and ta-C thin films
                        U. Vetter, P.Reinke, C. Ronning, H. Hofsäss, P. Schaaf, K. Baruth-Ram, T. Taniguchi, Diam. Relat. Mater. 12 (2003) 1182
                      • Field Emission enhancement by nano-scale channels through ta-C layers
                        N. Koenigsfeld, H. Hofsass, D. Schwen, R. Kalish, A. Weidinger,C. Trautmann, Diam. Relat. Mater. 12 (2003) 469
                      • Ion beam Synthesis of diamondlike carbon thin films containing copper nanocrystals
                        I. Gerhards, C. Ronning, H. Hofsäss, M. Seibt, H. Gibhardt, J. Appl. Phys. 93 (2003) 1203
                      • Ion energy thresholds and stability of cubic boron nitride
                        S. Eyhusen, I. Gerhards, H. Hofsäss, C. Ronning, M. Blomenhofer, J. Zweck, M. Seibt, Diam. Relat. Mater. 12 (2003) 1877
                      • Intense ultra violet cathodoluminescence at 318 nm from Gd3+ - doped AlN
                        U. Vetter, J. Zenneck and H. Hofsäss, Appl. Phys. Lett. 83 (2003) 2145
                      • Lanthanide Doped Cubic Boron Nitride
                        U. Vetter, T. Taniguchi, U. Wahl, J. Correia, A. Müller, C.Ronning, H. Hofsäss, M. Dietrich and ISOLDE Collaboration, MRS Symp Proc. Vol. 744 (2003) M 8.38
                      • Lattice Location and Cathodoluminescence Studies of Ytterbium/Thulium Implanted 2H-Aluminium Nitride
                        U. Vetter, M.F. Reid, H. Hofsäss, J. Zenneck, C. Ronning, M. Dietrich, MRS Symp Proc. "GaN and Related Alloys", MRS Symp. Proc. Vol. 743 (2003) L 6.16
                      • Electron emission channeling spectroscopy using X-ray CCD detectors
                        H. Hofsäss, U. Vetter, C. Ronning, M. Uhrmacher, K. Bharuth-Ram, R. Hartmann, and L. Strüder, Nucl. Instr. Meth. A 512 (2003) 378
                      • Lattice location studies of rare earth impurities in 3C-, 4H- and 6H-SiC
                        U. Vetter, H. Hofsäss, U. Wahl, M. Dietrich and ISOLDE Collaboration, Diam. Relat. Mater. 12 (2003) 1883



                      Publications 2002


                      • Comment on "On the mechanism of the cubic phase formation in the boron nitride thin-film systems" [Appl. Phys. Lett. 79, 353 (2001)]
                        C. Ronning and H. Hofsäss, Appl. Phys. Lett. 80 (2002) 1306
                      • Surface Brillouin Scattering of c-BN Films
                        P. Zinin, M.H. Manghnani, X. Zhang, H. Feldermann, C. Ronning, H. Hofsäss, J. Appl. Phys. 91 (2002) 4196
                      • Fundamental role of ion bombardment for the synthesis of cubic boron nitride films
                        H. Hofsäss, H. Feldermann, S. Eyhusen, C. Ronning, Phys. Rev. B. 65 (2002) 115410
                      • Ion beam synthesis of amorphous boron carbide thin films
                        M. Büttner, O. Wondratschek, C. Ronning, U. Vetter and H. Hofsäss, Surf. Coat. Technol. 158/159 (2002) 382
                      • Ion beam synthesis of amorphous carbon thin films containing metallic nanoclusters
                        I. Gerhards, C. Ronning, U. Vetter and H. Hofsäss, F. Au, Q. Li and S.T. Lee, Surf. Coat. Technol. 158/159 (2002) 114
                      • Lattice site location of ion implanted 8Li in Silicon Carbide
                        S.Virdis, U.Vetter, C. Ronning, H. Kröger and H. Hofsäss, J. Appl. Phys. 91 (2002) 1046
                      • Implantation sites of Ce and Gd in diamond
                        K. Bharuth-Ram, U. Vetter, H. Hofsäss, C. Ronning and M. Dietrich, Nucl. Instr. Meth. B 190 (2002) 835



                      Publications 2000


                      • Growth, doping and applications of c-BN thin films
                        C. Ronning, H. Feldermann, H. Hofsäss, Diam. Relat. Mater. 9 (2000) 1767-1773
                      • Hydrogen-plasma etching of ion beam deposited c-BN films: an in-situ invesitgation of the surface with electron spectroscopy
                        P. Reinke, P. Oelhafen, H. Feldermann, C. Ronning, and H. Hofsäss, J. Appl. Phys. 88 (2000) 5597
                      • Ripple topography of ion-beam-eroded graphite: A key to ion-beam-induced damage tracks
                        S. Habenicht, W. Bolse, H. Feldermann, U. Geyer, H. Hofsäss, K.P. Lieb, and F. Roccaforte, Europhys. Lett. 50 (2000) 209-215
                      • Characterization of Superhard Materials and Thin Films by Surface Brillouin Scattering
                        X. Zhang, M.H. Manghnani, P. Zinin, H. Feldermann, C. Ronning, H. Hofsäss, I.A. Trojan, A.G. Lyapin, V.V. Brazhkin, W. Rafaniello, Proc. Int. Conf. Science and Technology of high Pressure AIRAPT-17,, M.H. Manghnani, W.J. Nellis, M.F. Nicol (eds.), Science and Technology of High Pressure 2 (2000) 941-944
                      • Properties of Ion Beam Deposited Tetrahedral Fluorinated Amorphous Carbon Films (ta-C:F)
                        C. Ronning, R. Merk, H. Feldermann, F. Harbsmeier, H. Hofsäss, in "Amorphous Carbon and Nanostrucutred Carbon", T. Allen, B.F. Coll, J. Robertson, J.P. Sullivan (eds.), MRS Symp. Proc. Vol. 593 (2000)
                      • Photoluminescence characterization of Mg implanted GaN
                        C. Ronning, H. Hofsäss, A. Stötzler, M. Deicher, E.P. Carlson, P.J. Hartlieb, T. Gehrke, P. Rajagopal, R.F. Davis, MRS Internet J. Nitride Semicond. Res. 5S1, W11.44 (2000).
                      • Ion implanted impurities in GaN and AlN: lattice sites, annealing behavior and defect recovery
                        C. Ronning, M. Dalmer, M. Uhrmacher, M. Restle, U. Vetter, L. Ziegeler, H. Hofsäss, T. Gehrke, K. Järrendahl, R.F. Davis, J. Appl. Phys. 87 (2000) 2149




                      Publications until 1999


                      • Herstellungsverfahren für eine mikromechanische Vorrichtung
                        H. Hofsäss, J. Boneberg, P. Leiderer, Deutsches Patent Nr. 197 52 202.5-09 vom 25.11.1997
                      • Synthesis and Properties of Cubic Boron Nitride Thin Films
                        H. Feldermann, M. Sebastian, R. Merk, M. Restle, C. Ronning and H. Hofsäss, in Hard Coatings Based on Borides, Carbides &Nitrides, A. Kumar, Y.Chung, R.W.J. Chia (eds.), (TMS Minerals Metals and Materials Society, Warrendale, 1998), p.143
                      • Electronic Properties of Undoped and Doped Tetrahedral Amorphous Carbon
                        H. Hofsäss, in Proceedings of First Specialist Meeting on Amorphous Carbon (SMAC 97), eds. S.R.P. Silva, J. Robertson, W.I. Milne, G.A.J. Amaratunga (World Scientific, Singapore, 1998) p. 296
                      • Cylindrical Spike Model for the Formation of Diamondlike Thin Films by Ion Deposition
                        H. Hofsäss, C. Ronning, M. Sebastian and H. Feldermann, Appl. Phys. A 66 (1998) 153-182
                      • Ion Beam Deposition and Doping of Diamondlike Materials
                        H. Hofsäss and C. Ronning, in: "Proc. 2nd Int. Conf. on Beam Processing of Advanced Ma­terias"l, eds. J. Singh, S. M. Copley, J. Mazumder, (ASM Int., Materials Park, 1996) p. 29-56
                      • Mass Separated Ion Beam Deposition: a Unique Technique to Grow DLC, c-BN and CN Films
                        C. Ronning and H. Hofsäss, in Diamond Materials IV, Proc. 4th Int. Symposium, eds. K.V. Ravi, J.P. Dismukes, (The Electrochemical Society, Pennington, 1995) 359-364
                      • Elastic Properties of Hard c-BN Films by Surface Brillouin Scattering
                        M.H. Manghnani, X. Zhang, S. Tkachev, P. Zinin, H. Feldermann, C. Ronning, H. Hofsäss, A.G. Every, in Nondestructive Characterization of Materials IX, R.E. Geern, Jr. (ed.), AIP Conf. Proc. 497 (1999) 315
                      • Electrically Conducting Ion Tracks in Diamond-like Carbon Films for Field Emission
                        M. Waiblinger, Ch. Sommerhalter, B. Pietzak, J. Krauser, B. Mertesacker, M. Ch. Lux-Steiner, S. Klaumünzer, A. Weidinger, C. Ronning, H. Hofsäss, Appl. Phys. A. 69 (1999) 239
                      • Room Temperature Growth of Cubic Boron Nitride
                        H. Feldermann, R. Merk, H. Hofsäss, C. Ronning and T. Zheleva, Appl. Phys. Lett. 74 (1999) 1552
                      • Modelling of the Ion Beam Deposition Process of Covalently Bonded Diamondlike Materials
                        H.C. Hofsäss, M. Sebastian, R. Merk, C. Ronning and H. Feldermann, Mat. Res. Soc. Symp. Proc. Vol. 498 (1998) 129
                      • Carbon nitride deposited using energetic species: A review on XPS studies
                        C. Ronning, H. Feldermann, R. Merk, H. Hofsäss, P. Reinke and J.-U. Thiele, Phys. Rev. B58 (1998) 2207-2215
                      • Carbon Transport in Si (001) and Nucleation of Diamond-like Carbon Layers During Mass Selected Ion Beam Deposition
                        S. Christiansen, M. Albrecht, H.P. Strunk, H. Hofsäss, C. Ronning and E. Recknagel, Diam. Relat. Mater 7 (1998) 15
                      • Thresholds for the Phase Formation of Cubic Boron Nitride Thin Films
                        H. Hofsäss, H. Feldermann, M. Sebastian and C. Ronning, Phys. Rev. B 55 (1997) 13230
                      • Quantitative Analysis of Chemically-Enhanced Sputtering During Ion Beam Deposition of Carbon Nitride Thin Films
                        H. Hofsäss, C. Ronning, H. Feldermann, M. Sebastian, Mat. Res. Soc. Symp. Proc. 438 (1997) 575-580
                      • Thin Film Growth of Group III Nitrides by Mass Separated Ion Beam Deposition
                        C. Ronning, E. Dreher, H. Feldermann, M. Sebastian, J. Zweck, R. Fischer and H. Hofsäss, Mat. Res. Soc. Symp. Proc. 449 (1997) 331-336
                      • Electrical Properties and Thermal Stability of Ion Beam Deposited BN Films
                        C. Ronning, M. Gross, E. Dreher, H. Feldermann and H. Hofsäss, Diam. Relat. Mater. 6 (1997) 1129-1134
                      • Electronic Structure of Undoped and Doped ta-C Films
                        C. Ronning, E. Dreher, J.-U. Thiele, P. Oelhafen and H. Hofsäss, Diam. Relat. Mater. 6 (1997) 830-834
                      • Electrical Characterization of pn and pin Diode Structures Made by Ion Beam Deposition of Doped Diamond-like Carbon
                        H. C. Hofsäss, C. Ronning, U. Griesmeier, M. Gross, A. Cedvall , E. Dreher and J. Biegel, in Applications of Diamond Films and Related Materials: Third International Conference, eds.: A. Feldman, Y. Tzeng, W.A. Yarbrough, M. Yoshikawa, M. Murakawa, NIST Special Publication 885 (1995) p.775-778
                      • Cubic Boron Nitride Films Grown by Low Energy B+ and N+ Ion Beam Deposition
                        H. Hofsäss, C. Ronning, U. Griesmeier, M. Gross, S. Reinke, M. Kuhr, Appl. Phys. Lett. 67 (1995) 46-48
                      • Characterization of Cubic Boron Nitride Films Grown by Mass Separated Ion Beam Deposition
                        H. Hofsäss, C. Ronning, U. Griesmeier, M. Gross, S. Reinke, M. Kuhr, J. Zweck, R. Fischer, Nucl. Instr. Meth. B 106 (1995) 153
                      • Conduction Processes in Boron and Nitrogen Doped Diamond-like Carbon Films Prepared by Mass Separated Ion Beam Deposition
                        C. Ronning, U. Griesmeier, M. Gross, H. Hofsäss, R.G. Downing and G.P. Lamaze, Diam. Relat. Mater. 4 (1995) 666
                      • CxN1-x Thin Films Prepared by Mass Separated Ion Beam Deposition
                        C. Ronning, U. Griesmeier, M. Gross, H. Hofsäss, in Beam-Solid Interactions for Materials Synthesis and Characterization, eds. D.E. Luzzi, T.F. Heinz, M. Iwaki, D.C. Jacobsen,
                        Mat. Res. Soc. Symp. Proc. Vol 354 (1995) 93
                      • Characterization of Doped Diamondlike Carbon Films and Multilayers
                        H. Hofsäss, J. Biegel, C. Ronning, R.G. Downing, G.P. Lamaze, in Materials Synthesis and Processing Using Ion Beams , eds. R.J. Culbertson, K.S. Jones, O.W. Holland, K. Maex, Mat. Res. Soc. Symp. Proc. 316 (1994) 881
                      • Doping and Growth of Diamond-like Carbon Films by Ion Beam Deposition
                        H. Hofsäss, H. Binder, T. Klumpp and E. Recknagel, Diam. Relat. Mater. 3 (1994) 137
                      • Ion Implantation and Annealing of Diamond Studied by Emission Channeling and Cathodoluminescence
                        C. Ronning and H. Hofsäss, Diam. Relat. Mater. 8 (1999) 1623-1630
                      • Emission Channeling
                        H. Hofsäss, Hyp. Int. 97/98 (1996) 247-283
                      • Impurity Lattice Location and Recovery of Structural Defects in Semiconductors Studied by Emission Channeling
                        H. Hofsäss, U. Wahl and S. G. Jahn, Hyp. Int. 84 (1994) 27-41
                      • Emission Channeling Studies in Semiconductors
                        H. Hofsäss, S. Winter, S. Jahn, U. Wahl, E. Recknagel,Nucl. Instr. Meth. B63 (1992) 83-90
                      • Emission Channeling
                        S. Winter, H. Hofsäss, S.G. Jahn, G. Lindner, U. Wahl and E. Recknagel, in Hyperfine Interaction of Defects in Semiconductors, ed.: G. Langouche (Elsevier, Amsterdam, 1992) 157-185
                      • Emission Channeling and Blocking
                        H. C. Hofsäss and G. Lindner, Physics Reports 201 (1991) 121-183
                      • Lattice site and diffusion of ion-implanted Li in as-grown and Se-rich ZnSe
                        K. Bharuth-Ram, M. Restle, H. Hofsäss, C. Ronning, U. Wahl, and ISOLDE Collaboration Physica B 273 (1999) 875
                      • Emission Channeling Studies of Defect Annealing in the Wide Band Gap Semiconductors ZnTe and ZnSe
                        K. Bharuth-Ram, H. Hofsäss, M. Restle, U. Wahl and the ISOLDE Collaboration, Nucl. Instr. Meth. B 156 (1999) 244
                      • Li-Defect Reactions During Low Dose Ion Implantation of 8Li into ZnSe Single Crystals
                        M. Restle , M. Dalmer, U. Wahl, H. Hofsäss and ISOLDE Collaboration, MRS Symp. Proc. 540 (1999)
                      • Combination of Emission Channeling, Photoluminescence and Mössbauer Spectroscopy to Identify Rare Earth Defect Complexes in Semiconductors
                        M. Dalmer , U. Vettera, M. Restle , A. Stötzler, H. Hofsäss , C. Ronning, V.V. Naicker, M.K. Moodley, K. Bharuth-Ram and the ISOLDE-Collaboration, Proc. 11th Int. Conf. on Hyperfine Interactions, Hyp. Int. 120/121 (1999) 347
                      • Lattice Location and Luminescence Behavior of Rare Earth Elements Implanted in GaN
                        M. Dalmer, M. Restle, A. Stötzler, U. Vetter, H. Hofsäss, M.D. Bremser, C. Ronning, R.F. Davis and ISOLDE Collaboration, in "Nitride Semiconductors", S. DenBaars, B. Meyer, S. Nakamura, F. Ponce (eds.), MRS Proc. Vol. 482(1998) 1021-1026
                      • Li Ion Implantation Studies in GaN
                        M. Dalmer, M. Restle, C. Ronning, M. Sebastian, U. Vetter, H. Hofsäss, M.D. Bremser, R.F. Davis, U. Wahl, K. Bharuth-Ram, and ISOLDE Collaboration, J. Appl. Phys. 84 (1998) 3085
                      • Annealing Behaviour of ZnTe Investigated with 111mCd-Emission Channeling
                        K. Bharuth-Ram, M. Restle and H. Hofsäss, Nucl. Instr. Meth B 136 (1998) 751
                      • Recovery of Structural Defects in GaN after Heavy Ion Implantation
                        C. Ronning, M. Dalmer, M. Deicher, M. Restle, M.D. Bremser, R.F. Davis and H. Hofsäss, MRS Symp. Proc. Vol. 468 (1997) 407-412
                      • Perturbed Angular Correlation Measurements and Lattice Site Location of Br in GaAs
                        M. Wehner, M. Risse, R. Vianden, M. Dalmer, H. Hofsäss, M.C. Ridgeway, M. Petravic and ISOLDE Collaboration, Mater. Sci. For. 258-263 (1997) 899
                      • Substitutional Phosphorous Doping of Diamond by Ion Implantation
                        H. Hofsäss, M. Dalmer, M. Restle and C. Ronning, J. Appl. Phys. 81 (1997) 2566
                      • Behavior of the Potential n-Type Dopants P and As in Diamond After Low Dose Ion Implantation
                        H. Hofsäss, M. Dalmer, M. Restle, C. Ronning, K. Bharuth-Ram, H. Quintel and The ISOLDE-Collaboration, Mat. Res. Soc. Symp. Proc. Vol. 442 (1997) 675-680
                      • Microscopic Studies of Implanted 73As in Diamond: g-e- PAC and Emission Channeling Measurements
                        J.G. Marques, E. Alves, D. Forkel-Wirth, S.G. Jahn, M. Restle, M. Dalmer, H. Hofsäss, K. Bharuth-Ram and ISOLDE Collaboration, Nucl. Instr. Meth. B 127/128 (1997) 723
                      • Cathodoluminescence Studies of Ion Implanted Diamond
                        H. Sternschulte, T. Albrecht, K. Thonke, R. Sauer, M. Dalmer, C. Ronning and H. Hofsäss, Appl. Phys. Lett. 71 (1997) 2668
                      • Ion implantation Doping of Diamond Studied by PAC
                        K. Bharuth-Ram, A. Burchard, M. Deicher, K. Freitag, H. Hofsäss, S.G. Jahn, R. Magerle, H. Quintel, M. Restle, C. Ronning and the ISOLDE Collaboration, Hyperfine Interactions (C) 1 (1996) 212
                      • Thermal Stability of Substitutional Ag in CdTe and ZnSe
                        S.G. Jahn, H. Hofsäss, M. Restle, C. Ronning, H. Quintel, K. Bharuth-Ram and U. Wahl, and the ISOLDE Collaboration, J. Cryst. Growth 161 (1996) 172
                      • Lattice Sites of Li in CdTe
                        M. Restle, K. Bharuth-Ram, H. Quintel, C. Ronning, H. Hofsäss, S.G. Jahn and U. Wahl, and the ISOLDE Collaboration, J. Cryst. Growth 161 (1996) 168-171
                      • Alpha Emission Channeling Invesigations for Lattice Location of Li in Ge
                        U. Wahl, S.G. Jahn, M. Restle, H. Quintel, H. Hofsäss, Nucl. Instr. Meth B 118 (1996) 76-81
                      • Emission Channeling Study of Annealing of Radiation Damage in Heavy-ion Implanted Diamond
                        H. Quintel, K. Bharuth-Ram, H. Hofsäss, M. Restle, C. Ronning, Nucl. Instr. Meth. B 118 (1996) 72-75
                      • Amorphization of ZnSe by Ion Implantation at Low Temperatures
                        S.G. Jahn, H. Hofsäss, M. Restle, C. Ronning, H. Quintel, K. Bharuth-Ram, and the ISOLDE-Collaboration, in Ion Beam Modification of Materials, eds. J.S. Williams, R.G. Elliman, M.C. Ridgway, (Elsevier, Amsterdam, 1996) p. 907-911
                      • Lattice Sites of Ion Implanted Li in Zn-rich ZnSe
                        S. G. Jahn, U. Wahl, M. Restle, H. Quintel, H. Hofsäss and M. Wienecke, Mat. Sci. For. 196-201, Part 1 (1995) 315-320
                      • Lattice Sites of Li in Si and Ge
                        U. Wahl, S.G. Jahn, M. Restle, H. Quintel and H. Hofsäss, Mat. Sci. For. 196-201, Part 1 (1995) 115-120
                      • Lattice Sites of Ion Implanted Li in Diamond
                        M. Restle, K. Bharuth-Ram, H. Quintel, C. Ronning, U. Wahl, S.G. Jahn and H. Hofsäss, Appl. Phys. Lett. 66 (1995) 2733
                      • Lattice Sites of Arsenic Ions Implanted in Diamond
                        K. Bharuth-Ram, H. Quintel, M. Restle, C. Ronning, S.G. Jahn and H. Hofsäss, J. Appl. Phys. 78 (1995) 5180-5182
                      • a-Emission Channeling Studies of the Lattice Site of Oversized Atoms Implanted in Fe and Ni Single Crystals
                        J. De Wachter, S. Blässer, H. Hofsäss, S. Jahn, M. Lindroos, R. Moons, H. Pattyn, M. Restle, A. Vantomme, U. Wahl, P. van Duppen, G. Langouche, Nucl. Instr. Meth. B 106 (1995) 23-27
                      • Li on Bond-Center Sites in Si
                        U. Wahl, M. Restle, C. Ronning, H. Hofsäss, S.G. Jahn, Phys. Rev. B50 (1994) 2176
                      • Lattice Sites of Ion Implanted Li in Indium-Antimonide
                        H. Hofsäss, U. Wahl, M. Restle, C. Ronning and E. Recknagel, Nucl. Instr. Meth. B85 (1994) 468
                      • Lattice Location of Implants in Diamond by Conversion Electron Emission Channeling
                        E.J. Storbeck, S.H. Connell, J.P.F. Sellschop and H. Hofsäss, Nucl. Instr. Meth. B 85 (1994) 503
                      • Direct Evidence for Substitutional Li after Ion Implantation into Highly Phosphorous-doped Si
                        U. Wahl, H.Hofsäss, S.G. Jahn, S. Winter and E. Recknagel, Appl. Phys. Lett. 62 (1993) 684
                      • Lattice Location and Annealing Studies of Heavy Ion Implanted Diamond
                        H. Hofsäss, M. Restle, U. Wahl and E. Recknagel, Nucl. Instr. Meth. B80/81 (1993) 176
                      • Microscopic Characterization of Heavy-ion Implanted Diamond
                        A. Burchard, M. Restle, M. Deicher, H. Hofsäss, S.G. Jahn, Th. König, R. Magerle, W. Pfeiffer and U. Wahl, Physica B 185 (1993) 150
                      • Lattice Site Changes of Ion Implanted 8Li in Si Studied by Alpha Emission Channeling
                        U. Wahl, H. Hofsäss, S.G. Jahn, S. Winter, H. Hoffmann, E. Recknagel, Nucl. Instr. Meth. B63 (1992) 91
                      • Lattice Location of Ion Implanted 8Li in InP Studied by Alpha Emission Channeling
                        U. Wahl, H. Hofsäss, S. Jahn, S. Winter, E. Recknagel, Nucl. Instr. Meth. B64 (1992) 221
                      • Structural Defect Recovery in GaP after Heavy Ion Implantation
                        S.G. Jahn, H. Hofsäss, U. Wahl, S. Winter, E. Recknagel, Appl. Surf. Sci. 50 (1991) 169
                      • Perturbed-Angular-Correlation Measurements of Trivalent Indium Defects in Silver Chloride
                        J.C. Austin, M.L. Swanson, W.C. Hughes, C.T. Kao, L.M. Slifkin, H.C. Hofsäss, E.C. Frey, Phys. Rev. B42 No. 13 (1990) 7699
                      • Lattice Site Prevalence of Ion Implanted Li in GaAs
                        S. Winter, S. Blässer, H. Hofsäss, S. Jahn, G. Lindner, U. Wahl and E. Recknagel, in Defect Control in Semiconductors, ed: K. Sumino (Elsevier, 1990) p. 903
                      • Lattice Location of Ion Implanted Radioactive Dopants in Compound Semiconductors
                        S. Winter, S. Blässer, H. Hofsäss, S. Jahn, G. Lindner, U. Wahl, E. Recknagel, Nucl. Instr. Meth. B48 (1990) 211
                      • Annealing Behaviour of Compound Semiconductors After Ion Implantation Investigated by Emission-Channeling and Blocking
                        S.G. Jahn, H. Hofsäss, U. Wahl, S. Winter, E. Recknagel, Proceedings of XXV Zakopane School on Physics (Zakopane, Poland), Vol. 1: Condensed Matter Studies by Nuclear Methods, eds: J. Stanek, A.T. Pedziwiatr (World Scientific, Singapore, 1990) p. 331
                      • Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes
                        S. Winter, S. Blässer, H. Hofsäss, S. Jahn, G. Lindner and E. Recknagel, Mat. Sci. For. 38-41 (1989) 1221
                      • Site Changes of Ion-Implanted Li in GaAs below 300 K
                        G. Lindner, S. Winter, H. Hofsäss, S. Jahn, S. Blässer, E. Recknagel and G. Weyer, Phys. Rev. Lett. 63 No.2 (1989) 179
                      • Localization of Impurity Atoms by Channeling of Electrons and Positrons
                        H. Hofsäss, G. Lindner, S. Winter and E. Recknagel, in Nuclear Physics Applications on Materials Science, eds. E. Recknagel and J.C. Soares, NATO ASI Series E: Applied Sciences Vol. 144 (Kluwer Academic Publishers, Dordrecht, 1988) p. 157
                      • Lattice Location of Nuclear Probes by Electron and Positron Channeling
                        H. Hofsäss, B. Besold, G. Lindner, S. Winter, E. Recknagel and G. Weyer, in Relativistic Channeling , eds. R.A. Carrigan and J.A. Ellison, NATO ASI Series B: Physics Vol. 165 (Plenum Press, New York London, 1987) p. 483
                      • Combined PAC and Electron-Channeling Studies of He-Defect-Interaction in Cu Between 300 and 900 K
                        H. Hofsäss, S. Winter. G. Lindner, M. Deicher, G. Grübel, Th. Wichert and E. Recknagel, Radiation Effects 103 (1987) 1-14
                      • Electron-Positron-Channeling and Mössbauer-Effect Studies of Indium-Vacancy Complexes in Ion-Implanted Nickel
                        B. Besold, E. Danielsen, H. Hofsäss, G. Lindner, J.W. Petersen, E. Recknagel, M. Sondergaard, G. Weyer, S. Winter, eds.: H. Wollenberger and C. Abromeit, Mat. Sci. For. 15 - 18 (1987) 665
                      • Direct Evidence for Substitutional Ion-Implanted Indium Dopants in Silicon
                        G. Lindner, H. Hofsäss, S. Winter, B. Besold, G. Weyer, E. Recknagel, and J.W. Petersen, Phys. Rev. Lett. 57 No.18 (1986) 2283
                      • Localization of Implanted Radioactive Probes by Channeling of ß-, ß+ and Conversion Electrons
                        H. Hofsäss, G. Lindner, S. Winter, B. Besold, E. Recknagel and G. Weyer, Nucl. Instr. Meth. B13 (1986) 71-75
                      • As-Implanted Lattice Sites of Dopants in Semiconductors
                        H. Hofsäss, G. Lindner, S. Winter, B. Besold, E. Recknagel, G. Weyer and J.W. Petersen, ed.: H.J. von Bardeleben , Mat. Sci. For. 10-12 (1986) 1183
                      • Perturbed Angular Correlation and Rutherford Backscattering Studies in Indium Implanted Silicon
                        M. Deicher, G. Grübel, H. Hofsäss, E. Recknagel and Th. Wichert, Nucl. Instr. Meth. B15 (1986) 418-421
                      • Channeling of Conversion Electrons from Radioactive Impurities for Analysis of Atomic Structures in Solids
                        H. Hofsäss, G. Lindner, E. Recknagel and Th. Wichert, Nucl. Instr. Meth. B2 (1984) 13-18
                      • Microstructure Analysis by Channeling Using Nuclear Probes
                        G. Lindner, H. Hofsäss, E. Recknagel and Th. Wichert, in Microstructural Characterization of Materials by Non-Microscopical Techniques, eds. N. Hessel Andersen et. al. (Riso National Laboratory Roskilde, Denmark, 1984) p. 377
                      • Detection of Vacancy Clustering by Combined PAC and Lattice Location Experiments
                        M. Deicher, H. Hofsäss, G. Lindner, E. Recknagel, Th. Wichert, M. L. Swanson, L. M. Howe and A. F. Quenneville, Hyp. Int. 15/16 (1983) 379
                      • Probing of Lattice Defects by Radioactive Atoms
                        Th. Wichert, M. Deicher, G. Lindner, H. Hofsäss and E. Recknagel, Nucl. Instr. Meth. 218 (1983) 633
                      • Conventional Recoil Spectrometry
                        J. Tirira, Y. Serruys, P. Trocellier and H. Hofsäss, in Forward Recoil Spectrometry: Applications to Hydrogen Determination in Solids, Chapter 5, J. Tirira, Y. Serruys and P. Trocellier (eds.), (Plenum Press, New York, 1996, ISBN 0-306-45249-9) p. 127-142
                      • Coincidence Techniques
                        H. Hofsäss, J. Tirira, Y. Serruys and P. Trocellier, in Forward Recoil Spectrometry: Applications to Hydrogen Determination in Solids, Chapter 9, J. Tirira, Y. Serruys and P. Trocellier (eds.), (Plenum Press, New York, 1996, ISBN 0-306-45249-9) p.209-246
                      • Elastic Recoil Coincidence Spectroscopy (ERCS)
                        H.C. Hofsäss, N.R. Parikh, M.L. Swanson and W.K. Chu, Nucl. Instr. Meth. B58 (1991) 49
                      • Erratum to "Modeling detector response for neutron depth profiling" [NIM A 366 (1995) 137]
                        K.J. Coakley, R.G. Downing, G. Lamaze, H.C. Hofsäss, C. Ronning, J. Biegel, Nucl. Instr. Meth A 515, (2003) 892
                      • High-Resolution elastic recoil detection utilizing Bayesian probability theory
                        P. Neumaier, G. Dollinger, A. Bergmeier, I. Genchev, L. Görgens, R. Fischer, V. Dose, C. Ronning, H. Hofsäss, Nucl. Instr. Meth. B 183 (2001) 48-61
                      • High Sensitivity Depth Profiling of Light Elements Using Elastic Recoil Coincidence Spectroscopy (ERCS)
                        H. C. Hofsäss, N.R. Parikh, M.L. Swanson and W. K. Chu, Proc. of XXV Zakopane School on Physics (Zakopane, Poland), Vol. 1: Condensed Matter Studies by Nuclear Methods, eds: J. Stanek, A.T. Pedziwiatr (World Scientific, Singapore, 1990) p. 161
                      • Depth Profiling of Light Elements using Elastic Recoil Coincidence Spectroscopy (ERCS)
                        H. C. Hofsäss, N. R. Parikh, M. L. Swanson, W. K. Chu, Nucl. Instr. Meth. B45 (1990) 151
                      • Neutron Depth Profiling by Coincidence Spectrometry
                        N. R. Parikh, E. C. Frey, H. C. Hofsäss, M. L. Swanson, R.G. Downing, T. Z. Hossain, W. K. Chu, Nucl. Instr. Meth. B45 (1990) 70
                      • Modeling Detector Response for Neutron Depth Profiling
                        K.J. Coakley, R.G. Downing, G. Lamaze, H. Hofsäss, C. Ronning and J. Biegel, Nucl. Instr. Meth. A 366 (1995) 137-144
                      • Range Parameter Study of Au and Bi Implanted into Carbon Nitride Films
                        J. R. Kaschny, R. Pérez, M. Behar, H. Hofsäss and D. Fink, Nucl. Instr. Meth. B 122 (1997) 8-12
                      • The Accident at Chernobyl: A Report on Risk Management at a Local Hot Spot in West Germany
                        M. Deicher, A. Ernst, H. Hofsäss, G. Lindner, E. Recknagel and C. Hohenemser, in New Risks Issues and Management, eds. L.A. Cox, Jr. and P. F. Ricci (Plenum Press, New York, 1990) p. 477 (Proceedings of the 1986 Annual
                      • Meeting of the Society for Risk Analysis, Boston, USA 1986)
                      • Radioaktive Kontamination in der Bodensee-Region als Folge des Tschernobyl-Reaktorunfalls
                        G. Lindner, M. Deicher, H. Hofsäss, S.G. Jahn, D. Petermann, W. Pfeiffer, U. Wahl and E. Recknagel, in Tagungsbericht Jahrestagung Kerntechnik 1987, ed.: Deutsches Atomforum (Bonn, 1987) p. 283
                      • Chernobyl: An early Report
                        C. Hohenemser, M. Deicher, A. Ernst, H. Hofsäss, G. Lindner and E. Recknagel, Environment 28 (1986) 6 ; short reprint in Chemtech 16 (1986) 596
                      • Agricultural Impact of Chernobyl: A Warning
                        C. Hohenemser, M. Deicher, H. Hofsäss, G. Lindner, E. Recknagel and J.I. Budnik, Nature 321 (1986) 817
                      • Überregionale Aspekte der Tschernobyl-Radioaktivität im Bodensee-Gebiet
                        G. Lindner, M. Deicher, R. Eckmann, H. Hofsäss, S.G. Jahn, W. Müller, D. Petermann, W. Pfeiffer, S. Teufel, U. Wahl, S. Winter and E. Recknagel, in Radioaktivitäts­messungen in der Schweiz nach Tschernobyl und ihre wissenschaftliche Interpretation, eds.: L. André, E.J. Born and G. Fischer (Bern, 1986) p. 312